Publication detail

Near field photoluminescence and photoreflectance measurements of semiconductor structures

TOMÁNEK, P., BENEŠOVÁ, M., DOBIS, P., GRMELA, L., BRÜSTLOVÁ, J., OTEVŘELOVÁ, D., LÉTAL, P.

Original Title

Near field photoluminescence and photoreflectance measurements of semiconductor structures

Czech Title

Měření fotoluminiscence a fotodrazivosti polovodičových struktur v blízkém poli

English Title

Near field photoluminescence and photoreflectance measurements of semiconductor structures

Type

conference paper

Language

en

Original Abstract

We present near-field local photoluminescence, local current and photoreflectance spectroscopic study of semiconductor quantum structures using a technique of reflection scanning near-field optical microscopy (SNOM) in combination with Nitrogen (or Ti:Saphire) laser and dye laser in one arm and He-Ne lasers in the other one.

Czech abstract

V článku jsou popsány metody lokálního měření fotoluminiscence, fotoproudu a fotoodrazivosti na polovodičových stzrukturách s kvantovou jámou pomocí odrazného SNOM spojeného s dusíkovým (nebo Ti:Safírovým).

English abstract

We present near-field local photoluminescence, local current and photoreflectance spectroscopic study of semiconductor quantum structures using a technique of reflection scanning near-field optical microscopy (SNOM) in combination with Nitrogen (or Ti:Saphire) laser and dye laser in one arm and He-Ne lasers in the other one.

Keywords

near field optics, photoreflectance, photoluminescence, lateral resolution

RIV year

2001

Released

03.10.2001

Publisher

MSSI

Location

Limerick

Pages from

59

Pages to

59

Pages count

1

BibTex


@inproceedings{BUT6613,
  author="Pavel {Tománek} and Markéta {Benešová} and Pavel {Dobis} and Lubomír {Grmela} and Jitka {Brüstlová} and Dana {Otevřelová} and Petr {Létal}",
  title="Near field photoluminescence and photoreflectance measurements of semiconductor structures",
  annote="We present near-field local photoluminescence, local current and photoreflectance spectroscopic study of semiconductor quantum structures using a technique of reflection scanning near-field optical microscopy (SNOM) in combination with Nitrogen (or Ti:Saphire) laser and dye laser in one arm and He-Ne lasers in the other one.",
  address="MSSI",
  booktitle="Nanomaterials: Fundamentals and applications",
  chapter="6613",
  institution="MSSI",
  year="2001",
  month="october",
  pages="59",
  publisher="MSSI",
  type="conference paper"
}