Publication detail

Pressure Sensor with Si3N4 Diaphragm and Optoelectronic Sensing

BENEŠ, P., MATĚJKA, F., VRBA, R., KOLAŘÍK, V.

Original Title

Pressure Sensor with Si3N4 Diaphragm and Optoelectronic Sensing

Type

conference paper

Language

English

Original Abstract

Sensitive pressure sensor with nitride membrane and optoelectronic read-out system is described. Measured pressure is transformed into thick layer nitride membrane deflection. Nitride membrane serves as a mirror for laser beam and can move reflected laser mark. Mark’s position is sensed using position sensing device – fotolateral diode. Diode double current signal is amplified and conditioned digitally by ADuC 812 microcomputer. This one chip microcomputer provides an IEEE 1451.2 interface.

Key words in English

pressure, nitride membrane, optoelectronic, standard IEEE 1451

Authors

BENEŠ, P., MATĚJKA, F., VRBA, R., KOLAŘÍK, V.

RIV year

2001

Released

13. 9. 2001

Publisher

Instituto de Telecomunicacoes

Location

Lisbon, Portugal

ISBN

972-98115-4-7

Book

TEMI 2001 trends in electrical Measurement and Instrumentation

Pages from

327

Pages to

329

Pages count

3

BibTex

@inproceedings{BUT6231,
  author="Petr {Beneš} and František {Matějka} and Radimír {Vrba} and Vladimír {Kolařík}",
  title="Pressure Sensor with Si3N4 Diaphragm and Optoelectronic Sensing",
  booktitle="TEMI 2001 trends in electrical Measurement and Instrumentation",
  year="2001",
  pages="3",
  publisher="Instituto de Telecomunicacoes",
  address="Lisbon, Portugal",
  isbn="972-98115-4-7"
}