Publication detail

Local photoluminescence measurement of semiconductor InGaAs quantum dot excited states

TOMÁNEK, P., BENEŠOVÁ, M., DOBIS, P., BRÜSTLOVÁ, J., GRMELA, L.

Original Title

Local photoluminescence measurement of semiconductor InGaAs quantum dot excited states

Czech Title

Měření lokální fotoluminescence excitovaných stavů polovodičových InGaAs kvantových jam (Congress Photonics Europe, Strasbourg)

English Title

Local photoluminescence measurement of semiconductor InGaAs quantum dot excited states

Type

abstract

Language

en

Original Abstract

Recent advances in miniaturized systems have demonstrated that materials with nanometer scale structures can be successfully designed at the atomic and molecular levels to exhibit unique properties by using many methods including SNOM. The semiconductor quantum dots (QD)sue to their small size provide a fully quantized system with a strong 3-D carrier confinement with discrete, atomic like density of states. This feature makes QD very attractive for diverse optoelectronic devices. The photoluminescence measurements performed by SNOM show the difference of quantum dots in size, shape, indium contain and grown technique.

Czech abstract

Pokroky v miniaturizaci systémů ukázaly, že materiály s nanometrickými strukturami vykazují na atomární úrovni jedinečné vlastnosti, které mohou být zkoumány i pomocí SNOM. Kvantové jámy (QD)vytvářejí kvantový systém s 3-D vazbou s diskrétními atomárními hustotami stavů. Tato vlastnost QD je velmi atrkativní pro různé optoelektronické součástky. Měření fotoluminiscence pomocí SNOM ukazuje na rozdíly velikosti, obahu india a růstových technik kvantových jam.

English abstract

Recent advances in miniaturized systems have demonstrated that materials with nanometer scale structures can be successfully designed at the atomic and molecular levels to exhibit unique properties by using many methods including SNOM. The semiconductor quantum dots (QD)sue to their small size provide a fully quantized system with a strong 3-D carrier confinement with discrete, atomic like density of states. This feature makes QD very attractive for diverse optoelectronic devices. The photoluminescence measurements performed by SNOM show the difference of quantum dots in size, shape, indium contain and grown technique.

Keywords

InGaAs quantum dots, excited states, photoluminescence, near-field optics

Released

26.04.2004

Publisher

SPIE, Europe

Pages from

178

Pages to

178

Pages count

1

BibTex


@misc{BUT59947,
  author="Pavel {Tománek} and Markéta {Benešová} and Pavel {Dobis} and Jitka {Brüstlová} and Lubomír {Grmela}",
  title="Local photoluminescence measurement of semiconductor InGaAs quantum dot excited states",
  annote="Recent advances in miniaturized systems have demonstrated that materials with nanometer scale structures can be successfully designed at the atomic and molecular levels to exhibit unique properties by using many methods including SNOM. The semiconductor quantum dots (QD)sue to their small size provide a fully quantized  system with a strong 3-D carrier confinement with discrete, atomic like density of states. This feature makes QD very attractive for diverse optoelectronic devices. The photoluminescence measurements performed by SNOM show the difference of quantum dots in size, shape, indium contain and grown technique.
",
  address="SPIE, Europe",
  booktitle="Photonics Europe",
  chapter="59947",
  institution="SPIE, Europe",
  year="2004",
  month="april",
  pages="178",
  publisher="SPIE, Europe",
  type="abstract"
}