Publication detail

Photoluminiscence scanning near-field optical microscopy in GaAlAs/GaAs quantum wells

OTEVŘELOVÁ, D., GRMELA, L., TOMÁNEK, P., UHDEOVÁ, N.

Original Title

Photoluminiscence scanning near-field optical microscopy in GaAlAs/GaAs quantum wells

Czech Title

Fotoluminiscenční rastrovací mirkoskopie v blízkém poli GaAlAs/GaAs kvantových jam

English Title

Photoluminiscence scanning near-field optical microscopy in GaAlAs/GaAs quantum wells

Type

conference paper

Language

en

Original Abstract

Submicron spatial resolution photoluminescence is used to assess radiative efficiency and spatial uniformity of GaAlAs/GaAs heterojunctions. Room temperature photo-luminescence of multiple GaAlAs wells with GaAs barriers was measured as a function of a facet of device perpendicular to the layer structure The scanning near-field optical microscope is applied for the diagnostics of the defects in semiconductor devices for instance in a multiple quantum well grown by molecular beam epitaxy. Our high resolution studies reveal that the radiative recombination for the GaAlAs quantum well is approx. 50 times more efficient than for the underlying GaAs film. The comparison of the Far-field and Near-field characteristics of measured quantities are also given.

Czech abstract

Submikronové prostorové rozlišení fotoluminescence je použito k určení zářivé účinnosti a prostorové homogenity GaAlAs/GaAs heteroheteropřechodu. Změřili jsme fotluminiscenci násobných kvantových jam GaAlAs s GaAs bariérami při pokojové teplotě jako funkci polohy hran součástky. SNOM mikroskop je použit k nedestruktivním diagnostice defektů ve struktuře. Díky lokálnímu zkoumání s vysokým rozlišením bylo určeno, že zářivá rekombinace GaAlAs kvantové jámy je asi 50x výkonnější než pro pod ní ležící GaAs vrstvu. Je provedeno porovnání výsledků v blízkém a vzdáleném optickém poli.

English abstract

Submicron spatial resolution photoluminescence is used to assess radiative efficiency and spatial uniformity of GaAlAs/GaAs heterojunctions. Room temperature photo-luminescence of multiple GaAlAs wells with GaAs barriers was measured as a function of a facet of device perpendicular to the layer structure The scanning near-field optical microscope is applied for the diagnostics of the defects in semiconductor devices for instance in a multiple quantum well grown by molecular beam epitaxy. Our high resolution studies reveal that the radiative recombination for the GaAlAs quantum well is approx. 50 times more efficient than for the underlying GaAs film. The comparison of the Far-field and Near-field characteristics of measured quantities are also given.

Keywords

Local photoluminescence, scanning near-field optical microscopy, quantum well, superresolution

RIV year

2002

Released

26.05.2002

Publisher

Techmarket

Location

Praha

ISBN

80-86114-46-5

Book

Photonics Prague 2002

Pages from

148

Pages to

148

Pages count

1

BibTex


@inproceedings{BUT5019,
  author="Dana {Otevřelová} and Lubomír {Grmela} and Pavel {Tománek} and Naděžda {Uhdeová}",
  title="Photoluminiscence scanning near-field optical microscopy in GaAlAs/GaAs quantum wells",
  annote="Submicron spatial resolution photoluminescence is used to assess radiative efficiency and spatial uniformity of GaAlAs/GaAs heterojunctions. Room temperature photo-luminescence of multiple GaAlAs wells with GaAs barriers was measured as a function of a facet of device perpendicular to the layer structure The scanning near-field optical microscope is applied for the diagnostics of the defects in semiconductor devices for instance in a multiple quantum well grown by molecular beam epitaxy. Our high resolution studies reveal that the radiative recombination for the GaAlAs quantum well is approx. 50 times more efficient than for the underlying GaAs film. The comparison of the Far-field and Near-field characteristics of measured quantities are also given.

",
  address="Techmarket",
  booktitle="Photonics Prague 2002",
  chapter="5019",
  institution="Techmarket",
  year="2002",
  month="may",
  pages="148",
  publisher="Techmarket",
  type="conference paper"
}