Publication detail

Transmission Line on Semiconductor Substrate with Distributed Amplification

POKORNÝ, M. RAIDA, Z.

Original Title

Transmission Line on Semiconductor Substrate with Distributed Amplification

English Title

Transmission Line on Semiconductor Substrate with Distributed Amplification

Type

journal article in Web of Science

Language

en

Original Abstract

In order to compensate losses in metal strips, an active microstrip line on a semiconductor substrate is proposed, and its finite element model is presented. The active medium is provided by A3B5 semiconductor in high-intensity electric field. The propagation properties of the fundamental mode are computed and the thermal analysis is performed. The problem of system self-oscillation is discussed and empirical stability criteria are introduced. A proper heat-sink is proposed to provide the operation in a continuous regime.

English abstract

In order to compensate losses in metal strips, an active microstrip line on a semiconductor substrate is proposed, and its finite element model is presented. The active medium is provided by A3B5 semiconductor in high-intensity electric field. The propagation properties of the fundamental mode are computed and the thermal analysis is performed. The problem of system self-oscillation is discussed and empirical stability criteria are introduced. A proper heat-sink is proposed to provide the operation in a continuous regime.

Keywords

GaAs, active, mictrostrip, millimeter-wave, FEM, Gunn, thermal, COMSOL

RIV year

2010

Released

01.06.2010

Publisher

Ústav radioelektroniky, VUT v Brně

Location

Brno

Pages from

307

Pages to

312

Pages count

6

BibTex


@article{BUT49178,
  author="Michal {Pokorný} and Zbyněk {Raida}",
  title="Transmission Line on Semiconductor Substrate with Distributed Amplification",
  annote="In order to compensate losses in metal strips, an active microstrip line on a semiconductor substrate is proposed, and its finite element model is presented. The active medium is provided by A3B5 semiconductor in high-intensity electric field. The propagation properties of the fundamental mode are computed and the thermal analysis is performed. The problem of system self-oscillation is discussed and empirical stability criteria are introduced. A proper heat-sink is proposed to provide the operation in a continuous regime.",
  address="Ústav radioelektroniky, VUT v Brně",
  chapter="49178",
  institution="Ústav radioelektroniky, VUT v Brně",
  number="2",
  volume="19",
  year="2010",
  month="june",
  pages="307--312",
  publisher="Ústav radioelektroniky, VUT v Brně",
  type="journal article in Web of Science"
}