Publication detail

Modeling of Microwave Semiconductor Diodes

POKORNÝ, M. RAIDA, Z.

Original Title

Modeling of Microwave Semiconductor Diodes

English Title

Modeling of Microwave Semiconductor Diodes

Type

journal article - other

Language

en

Original Abstract

The paper deals with the multi-physical modeling of the microwave diodes. The electrostatic, drift-diffusion and thermal phenomena are considered in the physical model of the components. The basic semiconductor equations are summarized, and modeling issues are discussed. The simulation of the Gunn effect in transferred electron devices and carrier injection effect in PIN diodes are the aim of investigation and discussion. The analysis was performed in COMSOL Multiphysics computing environment using finite element method.

English abstract

The paper deals with the multi-physical modeling of the microwave diodes. The electrostatic, drift-diffusion and thermal phenomena are considered in the physical model of the components. The basic semiconductor equations are summarized, and modeling issues are discussed. The simulation of the Gunn effect in transferred electron devices and carrier injection effect in PIN diodes are the aim of investigation and discussion. The analysis was performed in COMSOL Multiphysics computing environment using finite element method.

Keywords

Gunn effect, carrier injection effect, PIN, FEM, COMSOL, drift-diffusion scheme, multi-physical model.

RIV year

2008

Released

01.09.2008

Publisher

Ústav radioelektroniky, VUT v Brně

Location

Brno

Pages from

47

Pages to

52

Pages count

6

BibTex


@article{BUT49090,
  author="Michal {Pokorný} and Zbyněk {Raida}",
  title="Modeling of Microwave Semiconductor Diodes",
  annote="The paper deals with the multi-physical modeling of the microwave diodes. The electrostatic, drift-diffusion and thermal phenomena are considered in the physical model of the components. The basic semiconductor equations are summarized, and modeling issues are discussed. The simulation of the Gunn effect in transferred electron devices and carrier injection effect in PIN diodes are the aim of investigation and discussion. The analysis was performed in COMSOL Multiphysics computing environment using finite element method.",
  address="Ústav radioelektroniky, VUT v Brně",
  chapter="49090",
  institution="Ústav radioelektroniky, VUT v Brně",
  journal="Radioengineering",
  number="3",
  volume="17",
  year="2008",
  month="september",
  pages="47--52",
  publisher="Ústav radioelektroniky, VUT v Brně",
  type="journal article - other"
}