Publication detail

Characterization of Nonlinear Integrated Capacitors

SUTORÝ, T. KOLKA, Z.

Original Title

Characterization of Nonlinear Integrated Capacitors

English Title

Characterization of Nonlinear Integrated Capacitors

Type

journal article - other

Language

en

Original Abstract

The paper deals with a modified CBCM (Charge-Based Capacitance Measurements) method for nonlinear capacitance characterization. The method is characterized by high resolution although it is based on equipment found in any average laboratory. CBCM was originally developed for linear interconnect measurements. The proposed modification uses two DC swept sources to measure the whole nonlinear Q-v characteristic in both polarities without the necessity to switch the measured object. A test-chip implementing the method was designed and manufactured in the 0.35 um CMOS process. Verification against known capacitances proved the correctness and accuracy of the method. It was successfully used for MOSCAPs characterization.

English abstract

The paper deals with a modified CBCM (Charge-Based Capacitance Measurements) method for nonlinear capacitance characterization. The method is characterized by high resolution although it is based on equipment found in any average laboratory. CBCM was originally developed for linear interconnect measurements. The proposed modification uses two DC swept sources to measure the whole nonlinear Q-v characteristic in both polarities without the necessity to switch the measured object. A test-chip implementing the method was designed and manufactured in the 0.35 um CMOS process. Verification against known capacitances proved the correctness and accuracy of the method. It was successfully used for MOSCAPs characterization.

Keywords

Charge-based capacitance measurements, test structures, MOS capacitors, integrated circuits.

RIV year

2008

Released

01.12.2008

Pages from

9

Pages to

14

Pages count

6

BibTex


@article{BUT48041,
  author="Tomáš {Sutorý} and Zdeněk {Kolka}",
  title="Characterization of Nonlinear Integrated Capacitors",
  annote="The paper deals with a modified CBCM (Charge-Based Capacitance Measurements) method for nonlinear capacitance characterization. The method is characterized by high resolution although it is based on equipment found in any average laboratory. CBCM was originally developed for linear interconnect measurements. The proposed modification uses two DC swept sources to measure the whole nonlinear Q-v characteristic in both polarities without the necessity to switch the measured object. A test-chip implementing the method was designed and manufactured in the 0.35 um CMOS process. Verification against known capacitances proved the correctness and accuracy of the method. It was successfully used for MOSCAPs characterization.",
  chapter="48041",
  journal="Radioengineering",
  number="4",
  volume="17",
  year="2008",
  month="december",
  pages="9--14",
  type="journal article - other"
}