Publication detail

Modeling of the I-V Characteristics in Amorphous Silicon n+-i-n+ Devices

ČECH, V.

Original Title

Modeling of the I-V Characteristics in Amorphous Silicon n+-i-n+ Devices

Type

journal article - other

Language

English

Original Abstract

Both model and experimental results of electron injection in amorphous silicon n+-i-n+ devices with heavily doped n+ layers are presented using a realistic model of such a structure, developed by the author.

Key words in English

amorphous silicon, thin film, space-charge-limited currents

Authors

ČECH, V.

Released

1. 1. 2000

ISBN

0021-4922

Periodical

Japanese Journal of Applied Physics

Year of study

88

Number

9

State

Japan

Pages from

5374

Pages to

5380

Pages count

7

BibTex

@article{BUT39847,
  author="Vladimír {Čech}",
  title="Modeling of the I-V Characteristics in Amorphous Silicon n+-i-n+ Devices",
  journal="Japanese Journal of Applied Physics",
  year="2000",
  volume="88",
  number="9",
  pages="7",
  issn="0021-4922"
}