Publication detail

Tunnel noise spectroscopy by reflection SNOM and STM

TOMÁNEK, P. GRMELA, L. BRÜSTLOVÁ, J. DOBIS, P.

Original Title

Tunnel noise spectroscopy by reflection SNOM and STM

Czech Title

Spektroskopie tunelového šumu pomocí odrazné SNOM a STM

English Title

Tunnel noise spectroscopy by reflection SNOM and STM

Type

journal article

Language

en

Original Abstract

The 1/f noise is a general phenomenon in physical systems. In this paper low - frequency noise of silicon crystal have been analyzed. Noise spectra can not be explained completely by a homogeneous band model of semiconductor. Therefore, we have developed a new tool, so called Tunnel Noise Spectroscopy permitting to localize a noise sources on the surface. Some applications of Scanning Tunneling Microscopy (STM) and of Reflection Scanning Near-field Optical Microscopy (r-SNOM) in the investigation of 1/f noise of the semiconductor surface coated by a thin gold film are also presented.

Czech abstract

The 1/f noise is a general phenomenon in physical systems. In this paper low - frequency noise of silicon crystal have been analyzed. Noise spectra can not be explained completely by a homogeneous band model of semiconductor. Therefore, we have developed a new tool, so called Tunnel Noise Spectroscopy permitting to localize a noise sources on the surface. Some applications of Scanning Tunneling Microscopy (STM) and of Reflection Scanning Near-field Optical Microscopy (r-SNOM) in the investigation of 1/f noise of the semiconductor surface coated by a thin gold film are also presented.

English abstract

The 1/f noise is a general phenomenon in physical systems. In this paper low - frequency noise of silicon crystal have been analyzed. Noise spectra can not be explained completely by a homogeneous band model of semiconductor. Therefore, we have developed a new tool, so called Tunnel Noise Spectroscopy permitting to localize a noise sources on the surface. Some applications of Scanning Tunneling Microscopy (STM) and of Reflection Scanning Near-field Optical Microscopy (r-SNOM) in the investigation of 1/f noise of the semiconductor surface coated by a thin gold film are also presented.

Keywords

1/f noise, STM, r-SNOM, measurements, tunnel noise spectroscopy, local index variation

RIV year

1997

Released

16.06.1997

Publisher

SPIE

Location

Bellingham, USA

Pages from

514

Pages to

514

Pages count

1

BibTex


@article{BUT38525,
  author="Pavel {Tománek} and Lubomír {Grmela} and Jitka {Brüstlová} and Pavel {Dobis}",
  title="Tunnel noise spectroscopy by reflection SNOM and STM",
  annote="The 1/f  noise is a general phenomenon in physical systems. In this paper low - frequency noise  of silicon crystal have been analyzed. Noise spectra  can not be explained completely by  a homogeneous  band model of semiconductor. Therefore, we have developed a new tool, so called  Tunnel Noise Spectroscopy permitting to localize a noise sources on the surface. Some applications of Scanning Tunneling Microscopy (STM) and of Reflection Scanning Near-field Optical Microscopy (r-SNOM)  in the investigation  of 1/f noise of the semiconductor surface coated by a thin gold film are also presented.",
  address="SPIE",
  chapter="38525",
  institution="SPIE",
  journal="Proceedings of SPIE",
  number="1",
  volume="3098",
  year="1997",
  month="june",
  pages="514",
  publisher="SPIE",
  type="journal article"
}