Publication detail

Tunnel noise spectroscopy by reflection SNOM and STM

TOMÁNEK, P. GRMELA, L. BRÜSTLOVÁ, J. DOBIS, P.

Original Title

Tunnel noise spectroscopy by reflection SNOM and STM

English Title

Tunnel noise spectroscopy by reflection SNOM and STM

Type

journal article - other

Language

en

Original Abstract

The 1/f noise is a general phenomenon in physical systems. In this paper low - frequency noise of silicon crystal have been analyzed. Noise spectra can not be explained completely by a homogeneous band model of semiconductor. Therefore, we have developed a new tool, so called Tunnel Noise Spectroscopy permitting to localize a noise sources on the surface. Some applications of Scanning Tunneling Microscopy (STM) and of Reflection Scanning Near-field Optical Microscopy (r-SNOM) in the investigation of 1/f noise of the semiconductor surface coated by a thin gold film are also presented.

English abstract

The 1/f noise is a general phenomenon in physical systems. In this paper low - frequency noise of silicon crystal have been analyzed. Noise spectra can not be explained completely by a homogeneous band model of semiconductor. Therefore, we have developed a new tool, so called Tunnel Noise Spectroscopy permitting to localize a noise sources on the surface. Some applications of Scanning Tunneling Microscopy (STM) and of Reflection Scanning Near-field Optical Microscopy (r-SNOM) in the investigation of 1/f noise of the semiconductor surface coated by a thin gold film are also presented.

Keywords

1/f noise, STM, r-SNOM, measurements, tunnel noise spectroscopy, local index variation

RIV year

1997

Released

16.06.1997

Publisher

SPIE

Location

Bellingham, USA

ISBN

0277-786X

Periodical

Proceedings of SPIE

Year of study

3098

Number

1

State

US

Pages from

514

Pages to

514

Pages count

1

Documents

BibTex


@article{BUT38525,
  author="Pavel {Tománek} and Lubomír {Grmela} and Jitka {Brüstlová} and Pavel {Dobis}",
  title="Tunnel noise spectroscopy by reflection SNOM and STM",
  annote="The 1/f  noise is a general phenomenon in physical systems. In this paper low - frequency noise  of silicon crystal have been analyzed. Noise spectra  can not be explained completely by  a homogeneous  band model of semiconductor. Therefore, we have developed a new tool, so called  Tunnel Noise Spectroscopy permitting to localize a noise sources on the surface. Some applications of Scanning Tunneling Microscopy (STM) and of Reflection Scanning Near-field Optical Microscopy (r-SNOM)  in the investigation  of 1/f noise of the semiconductor surface coated by a thin gold film are also presented.",
  address="SPIE",
  chapter="38525",
  institution="SPIE",
  journal="Proceedings of SPIE",
  number="1",
  volume="3098",
  year="1997",
  month="june",
  pages="514",
  publisher="SPIE",
  type="journal article - other"
}