Publication detail

Non-thermal regimes of laser annealing of semiconductor nanostructures: crystallization without melting

Mirza, I. Bulgakov, AV. Sopha, H. Starinskiy, SV. Turcicova, H. Novák, O. Muzík, J. Smrz, M. Volodin, VA. Mocek, T. Macak, JM. Bulgakova, NM.

Original Title

Non-thermal regimes of laser annealing of semiconductor nanostructures: crystallization without melting

Type

journal article in Web of Science

Language

English

Original Abstract

As-prepared nanostructured semiconductor materials are usually found in an amorphous form, which needs to be converted into a crystalline one for improving electronic properties and achieving enhanced application functionalities. The most utilized method is thermal annealing in a furnace, which however is time- and energy-consuming and not applicable for low-temperature melting substrates. An alternative is laser annealing, which can be carried out in a relatively short time and, additionally, offers the possibility of annealing localized areas. However, laser-annealed nanostructures are often distorted by melting, while preserving the as-prepared morphology is essential for practical applications. In this work, we analyze conditions of non-thermal ultrafast laser annealing of two kinds of nanostructures: anodic TiO2 nanotube layers and Ge/Si multilayer stacks. For both cases, regimes of crystallization have been found, which yield in preserving the initial nanomaterial morphologies without any melting signs. On these examples, ultrafast non-thermal mechanisms of structural material transformation are discussed, which can provide new opportunities for conversion of amorphous semiconductor nanomaterials into a desired crystalline form that is of high demand for existing and emerging technologies.

Keywords

amorphous titania nanotubes; ultrashort laser pulses; laser-induced crystallization; non-thermal processes; stress waves; multilayer nanofilms; selective annealing

Authors

Mirza, I.; Bulgakov, AV.; Sopha, H.; Starinskiy, SV.; Turcicova, H.; Novák, O.; Muzík, J.; Smrz, M.; Volodin, VA.; Mocek, T.; Macak, JM.; Bulgakova, NM.

Released

19. 10. 2023

Publisher

FRONTIERS MEDIA SA

Location

LAUSANNE

ISBN

2673-3013

Periodical

Frontiers in Nanotechnology

Year of study

5

Number

1271832

State

Swiss Confederation

Pages count

12

URL

https://www.frontiersin.org/articles/10.3389/fnano.2023.1271832/full

BibTex

@article{BUT187366,
  author="Mirza, I. and Bulgakov, AV. and Sopha, H. and Starinskiy, SV. and Turcicova, H. and Novák, O. and Muzík, J. and Smrz, M. and Volodin, VA. and Mocek, T. and Macak, JM. and Bulgakova, NM.",
  title="Non-thermal regimes of laser annealing of semiconductor nanostructures: crystallization without melting",
  journal="Frontiers in Nanotechnology",
  year="2023",
  volume="5",
  number="1271832",
  pages="12",
  doi="10.3389/fnano.2023.1271832",
  issn="2673-3013",
  url="https://www.frontiersin.org/articles/10.3389/fnano.2023.1271832/full"
}