Publication detail

Local electrical characteristic of memristor structure in a high-resistance state obtained using electrostatic force microscopy: Fractal and multifractal dynamics of surface

RAMAZANOV, S. ORUDZEV, F. GAJIEV, G. HOLCMAN, V. MATOS, R.S. FONSECA, H.D.D. TALU, S. SELIMOV, D.

Original Title

Local electrical characteristic of memristor structure in a high-resistance state obtained using electrostatic force microscopy: Fractal and multifractal dynamics of surface

Type

journal article in Web of Science

Language

English

Original Abstract

A heterostructure BiFeO3/TiO2(Nt)Ti (BFOT) was obtained by the atomic layer deposition (ALD) method. After thermal treatment, the redistribution of Fe/Ti atoms forms an Aurivillius intermediate layered phase, and local charge capture centers are formed in the sample. Due to cationic non-stoichiometry, the BFO film exhibits p-type conductivity, while the nanotubes exhibit n-type conductivity due to oxygen vacancies. It was observed that lateral displacement of the sample can lead to ferroelectric switching, which can, in turn, affect the transition of the memristive structure from high-resistance (HRS) to low-resistance states (LRS). The hysteresis suppression tends to transition to an ohmic character and depends on the amplitude, frequency, and duration of the periodic signal. It has been found that compensation of static charge during resistive switching can affect the transport properties of the material. Fractal dimension analysis showed an acceleration of structure restructuring with increasing voltage, possibly contributing to the transition from an insulator to a metal in certain areas of the film volume. The joint analysis of piezoresponse force microscopy (PFM), electrostatic force microscopy (EFM), and fractal/multifractal dynamics showed a correlation between surface static charge and piezopotential. The new methodology described in this work can help understand the resistive switching processes in ferroelectric/ semiconductor memristive structures.

Keywords

Heterostructure; Memristor; EFM; PFM; Resistive switching; Space charge

Authors

RAMAZANOV, S.; ORUDZEV, F.; GAJIEV, G.; HOLCMAN, V.; MATOS, R.S.; FONSECA, H.D.D.; TALU, S.; SELIMOV, D.

Released

9. 11. 2023

Publisher

ELSEVIER

Location

AMSTERDAM

ISBN

0169-4332

Periodical

Applied Surface Science

Year of study

647

Number

Únor 2024

State

Kingdom of the Netherlands

Pages from

1

Pages to

12

Pages count

12

URL

https://www.sciencedirect.com/science/article/pii/S0169433223025436?via%3Dihub

BibTex

@article{BUT186945,
  author="RAMAZANOV, S. and ORUDZEV, F. and GAJIEV, G. and HOLCMAN, V. and MATOS, R.S. and FONSECA, H.D.D. and TALU, S. and SELIMOV, D.",
  title="Local electrical characteristic of memristor structure in a high-resistance state obtained using electrostatic force microscopy: Fractal and multifractal dynamics of surface",
  journal="Applied Surface Science",
  year="2023",
  volume="647",
  number="Únor 2024",
  pages="1--12",
  doi="10.1016/j.apsusc.2023.158863",
  issn="0169-4332",
  url="https://www.sciencedirect.com/science/article/pii/S0169433223025436?via%3Dihub"
}