Publication detail

Comparison of on-chip MIS capacitors based on stacked HfO2/Al2O3 nanolaminates

KARTCI, A. VANČÍK, S. PRÁŠEK, J. HRDÝ, R. SCHNEIDER, M. SCHMID, U. HUBÁLEK, J.

Original Title

Comparison of on-chip MIS capacitors based on stacked HfO2/Al2O3 nanolaminates

Type

journal article in Web of Science

Language

English

Original Abstract

High-kappa dielectric materials are commonly used in microelectronic components due to the technological necessity of increasing the capacitance density of dielectric layers. The thickness of the layer is a crucial parameter of this technology because it has a significant influence on dielectric properties, capacitance density, leakage current density-voltage (J-V), breakdown voltage, and capacitance density-voltage (C-V). Among metal oxide compounds, HfO2 and Al2O3 have been widely studied due to their good thermodynamic stability in contact with silicon. Thus, in this study, devices are fabricated by atomic layer deposition (ALD) processes on Si wafer. Properties of HfO2/Al2O3-based stack dielectric as on-chip MIS capacitors are investigated. The capacitance density, C-V, J-V, impedance characteristics, equivalent dielectric constant, breakdown voltage, and leakage current are studied on stacks (HfO2/Al2O3) with a thickness ratio of 1:1. The experimental results indicate very good leakage current and good breakdown voltage. Oxygen vacancies play a significant role in increasing the conductance and contrarily decreasing the equivalent dielectric constant of the stack.

Keywords

ALD; HfO2/Al2O3 nanolaminate; High-kappa dielectrics; Laminate structure; Metal-Insulator-Semiconductor (MIS); On-chip capacitor

Authors

KARTCI, A.; VANČÍK, S.; PRÁŠEK, J.; HRDÝ, R.; SCHNEIDER, M.; SCHMID, U.; HUBÁLEK, J.

Released

1. 12. 2022

Publisher

ELSEVIER

Location

AMSTERDAM

ISBN

2352-4928

Periodical

Materials Today Communications

Year of study

33

Number

1

State

United Kingdom of Great Britain and Northern Ireland

Pages from

1

Pages to

8

Pages count

8

URL

https://www.sciencedirect.com/science/article/pii/S2352492822015057?via%3Dihub

BibTex

@article{BUT179981,
  author="Aslihan {Kartci} and Silvester {Vančík} and Jan {Prášek} and Radim {Hrdý} and Michael {Schneider} and Ulrich {Schmid} and Jaromír {Hubálek}",
  title="Comparison of on-chip MIS capacitors based on stacked HfO2/Al2O3 nanolaminates",
  journal="Materials Today Communications",
  year="2022",
  volume="33",
  number="1",
  pages="1--8",
  doi="10.1016/j.mtcomm.2022.104664",
  issn="2352-4928",
  url="https://www.sciencedirect.com/science/article/pii/S2352492822015057?via%3Dihub"
}