Publication detail

An Investigation of the optoelectrical properties of n-TiO2Eu/p-Si heterojunction photodiode

RUZGAR, S. CAGLAR, Y. POLAT, Ö. SOBOLA, D. CAGLAR, M.

Original Title

An Investigation of the optoelectrical properties of n-TiO2Eu/p-Si heterojunction photodiode

Type

journal article in Web of Science

Language

English

Original Abstract

In the present investigation, titanium dioxide (TiO2) and Euphorium (Eu) doped TiO2 films were deposited on both glass and n-Si substrates via employing sol-gel spin coating technique to characterize optical, morphological, chemical features and scrutinize their heterojunction applications. The atomic force microscope (AFM), Ultraviolet-visible (UV-VIS) and Raman studies were conducted to inspect the morphological, optical, chemical, and crystal phase properties of thin films, respectively. The optical band gap of TiO2 films widened from 3.40 eV to 3.44 eV with increasing Eu doping concentration. The Raman analyses displayed that the deposited TiO2 films were in the anatase phase. The AFM images indicated Eu substitution influences the surface structure of the fabricated films. The optoelectrical properties of the fabricated heterojunction structures were determined under dark and various illumination intensities. When the optoelectrical properties of the obtained diodes were examined, it was realized that while the ideality factor (eta) and series resistance (RS) decreased, the barrier height (FB), photosensitivity and photoresponse parameters increased with the optimum Eu concentration. The results underscore that Eu substitution into TiO2 structure influences structural, optical, and electrical parameters. Thus, the Eu material could be used as a potential candidate to improve the optoelectrical performance of n-TiO2/p-Si.

Keywords

TiO2; Eu dopant; sol gel spin coating; AFM; Photodiodes

Authors

RUZGAR, S.; CAGLAR, Y.; POLAT, Ö.; SOBOLA, D.; CAGLAR, M.

Released

1. 6. 2022

Publisher

ELSEVIER

Location

AMSTERDAM

ISBN

2468-0230

Periodical

SURFACES AND INTERFACES

Year of study

30

Number

1

State

Kingdom of the Netherlands

Pages from

101832

Pages to

101840

Pages count

9

URL

https://www.sciencedirect.com/science/article/pii/S2468023022001134?via%3Dihub

BibTex

@article{BUT179262,
  author="Serif {Ruzgar} and Yasemin {Caglar} and Özgür {Polat} and Dinara {Sobola} and Mujdat {Caglar}",
  title="An Investigation of the optoelectrical properties of n-TiO2Eu/p-Si heterojunction photodiode",
  journal="SURFACES AND INTERFACES",
  year="2022",
  volume="30",
  number="1",
  pages="9",
  doi="10.1016/j.surfin.2022.101832",
  issn="2468-0230",
  url="https://www.sciencedirect.com/science/article/pii/S2468023022001134?via%3Dihub"
}