Publication detail

Organoselenium Precursors for Atomic Layer Deposition

CHARVOT, J. ZAZPE MENDIOROZ, R. MACÁK, J. BUREŠ, F.

Original Title

Organoselenium Precursors for Atomic Layer Deposition

Type

journal article in Web of Science

Language

English

Original Abstract

Organoselenium compounds with perspective application as Se precursors for atomic layer deposition have been reviewed. The originally limited portfolio of available Se precursors such as H2Se and diethyl(di)selenide has recently been extended by bis trialkylsilyl)selenides, bis(trialkylstannyl)selenides, cyclic selenides, and tetrakis(N,N-dimethyldithiocarbamate)-selenium. Their structural aspects, property tuning, fundamental properties, and preparations are discussed. It turned out that symmetric four- and six-membered cyclic silyl selenides possess well-balanced reactivity/stability, facile and cost-effective synthesis starting from inexpensive and readily available chlorosilanes, improved resistance toward air and moisture, easy handling, sufficient volatility, thermal resistance, and complete gas-to-solid phase exchange reaction with MoCl5, affording MoSe2 nanostructures. These properties make them the most promising Se precursor developed for atomic layer deposition so far.

Keywords

Organoselenium compounds

Authors

CHARVOT, J.; ZAZPE MENDIOROZ, R.; MACÁK, J.; BUREŠ, F.

Released

16. 3. 2021

Publisher

American Chemical Society

Location

WASHINGTON

ISBN

2470-1343

Periodical

ACS OMEGA

Year of study

6

Number

10

State

United States of America

Pages from

6554

Pages to

6558

Pages count

5

URL

Full text in the Digital Library

BibTex

@article{BUT173123,
  author="Jaroslav {Charvot} and Raúl {Zazpe Mendioroz} and Jan {Macák} and Filip {Bureš}",
  title="Organoselenium Precursors for Atomic Layer Deposition",
  journal="ACS OMEGA",
  year="2021",
  volume="6",
  number="10",
  pages="6554--6558",
  doi="10.1021/acsomega.1c00223",
  issn="2470-1343",
  url="https://pubs.acs.org/doi/10.1021/acsomega.1c00223"
}