Publication detail

Modeling tunneling effects and complex dynamics in tantalum oxide memristive devices

BIOLKOVÁ, V. KOLKA, Z. BIOLEK, D.

Original Title

Modeling tunneling effects and complex dynamics in tantalum oxide memristive devices

English Title

Modeling tunneling effects and complex dynamics in tantalum oxide memristive devices

Language

en

Original Abstract

The proposed model combines the accuracy of Simmon’s port equation and simplicity of state equation of TEAM model. A compact approximating formula is found for the port equation which overcomes convergence problems associated with the original equation. The state equation is transformed to the form which enables analytical pre-processing of its solution. It speeds-up significantly the transient analysis. The resulting compact model of the TiO2 device was tested via large-scale benchmark circuits in HSPICE. The transient analyses were run without convergence problems for networks containing ca 10 millions of memristors.

English abstract

The proposed model combines the accuracy of Simmon’s port equation and simplicity of state equation of TEAM model. A compact approximating formula is found for the port equation which overcomes convergence problems associated with the original equation. The state equation is transformed to the form which enables analytical pre-processing of its solution. It speeds-up significantly the transient analysis. The resulting compact model of the TiO2 device was tested via large-scale benchmark circuits in HSPICE. The transient analyses were run without convergence problems for networks containing ca 10 millions of memristors.

Keywords

memristor; model; TiO2

Released

17.12.2018

Publisher

EMN

Location

Auckland, New Zealand

Pages from

54

Pages to

55

Pages count

2

BibTex


@inproceedings{BUT152019,
  author="Viera {Biolková} and Zdeněk {Kolka} and Dalibor {Biolek}",
  title="Modeling tunneling effects and complex dynamics in tantalum oxide memristive devices",
  annote="The proposed model combines the accuracy of Simmon’s port equation and simplicity of state equation of TEAM model. A compact approximating formula is found for the port equation which overcomes convergence problems associated with the original equation. The state equation is transformed to the form which enables analytical pre-processing of its solution. It speeds-up significantly the transient analysis. The resulting compact model of the TiO2 device was tested via large-scale benchmark circuits in HSPICE. The transient analyses were run without convergence problems for networks containing ca 10 millions of memristors.",
  address="EMN",
  chapter="152019",
  howpublished="print",
  institution="EMN",
  year="2018",
  month="december",
  pages="54--55",
  publisher="EMN"
}