Publication detail

Ambipolar remote graphene doping by low-energy electron beam irradiation

STARÁ, V. PROCHÁZKA, P. MAREČEK, D. ŠIKOLA, T. ČECHAL, J.

Original Title

Ambipolar remote graphene doping by low-energy electron beam irradiation

English Title

Ambipolar remote graphene doping by low-energy electron beam irradiation

Type

journal article in Web of Science

Language

en

Original Abstract

We employ low-energy electron beam irradiation to induce both n- and p-doping in a graphene layer. Depending on the applied gate voltage during the irradiation, either n- or p-doping can be achieved, and by setting an appropriate irradiation protocol, any desired doping levels can be achieved

English abstract

We employ low-energy electron beam irradiation to induce both n- and p-doping in a graphene layer. Depending on the applied gate voltage during the irradiation, either n- or p-doping can be achieved, and by setting an appropriate irradiation protocol, any desired doping levels can be achieved

Keywords

Graphene, Field effect transistors, graphene transistors

Released

07.10.2018

ISBN

2040-3372

Periodical

Nanoscale

Year of study

10

Number

37

State

GB

Pages from

17520

Pages to

17524

Pages count

5

Documents

BibTex 


@article{BUT150300,
  author="Veronika {Stará} and Pavel {Procházka} and David {Mareček} and Tomáš {Šikola} and Jan {Čechal}",
  title="Ambipolar remote graphene doping by low-energy electron beam irradiation",
  annote="We employ low-energy electron beam irradiation to induce both n- and p-doping in a graphene layer. Depending on the applied gate voltage during the irradiation, either n- or p-doping can be achieved, and by setting an appropriate irradiation protocol, any desired doping levels can be achieved",
  chapter="150300",
  doi="10.1039/c8nr06483k",
  howpublished="print",
  number="37",
  volume="10",
  year="2018",
  month="october",
  pages="17520--17524",
  type="journal article in Web of Science"
}