Publication detail
Ambipolar remote graphene doping by low-energy electron beam irradiation
STARÁ, V. PROCHÁZKA, P. MAREČEK, D. ŠIKOLA, T. ČECHAL, J.
Original Title
Ambipolar remote graphene doping by low-energy electron beam irradiation
Type
journal article in Web of Science
Language
English
Original Abstract
We employ low-energy electron beam irradiation to induce both n- and p-doping in a graphene layer. Depending on the applied gate voltage during the irradiation, either n- or p-doping can be achieved, and by setting an appropriate irradiation protocol, any desired doping levels can be achieved
Keywords
Graphene, Field effect transistors, graphene transistors
Authors
STARÁ, V.; PROCHÁZKA, P.; MAREČEK, D.; ŠIKOLA, T.; ČECHAL, J.
Released
7. 10. 2018
ISBN
2040-3372
Periodical
Nanoscale
Year of study
10
Number
37
State
United Kingdom of Great Britain and Northern Ireland
Pages from
17520
Pages to
17524
Pages count
5
BibTex
@article{BUT150300,
author="Veronika {Stará} and Pavel {Procházka} and David {Mareček} and Tomáš {Šikola} and Jan {Čechal}",
title="Ambipolar remote graphene doping by low-energy electron beam irradiation",
journal="Nanoscale",
year="2018",
volume="10",
number="37",
pages="17520--17524",
doi="10.1039/c8nr06483k",
issn="2040-3372"
}