Publication detail

Local isolation of microscale defective areas in monocrysline silicon solar cells

GAJDOŠ, A.

Original Title

Local isolation of microscale defective areas in monocrysline silicon solar cells

Type

conference paper

Language

English

Original Abstract

This article is aimed on characterization of silicon solar cells microstructural inhomoge- neities. To detect inhomogeneity or imperfection, reverse biased current voltage (I-V) measurement is used. These imperfections in some cases may cause avalanche type of breakdown, that can be visible in I-V curve. Therefore, the fact that certain imperfections emit light is used for localization needs. Raw localization is provided by electroluminescence (EL) method. Near-field scanning microscopy (SNOM) combined with photomultiplier tube is used for microscale localization. Both methods are done in reverse bias. Isolation of inhomogeneity by focused ion beam (FIB) is avoid- ing leakage current flow through it.

Keywords

Solar cell, FIB, SEM, SNOM, silicon, electroluminescence

Authors

GAJDOŠ, A.

Released

26. 4. 2018

Publisher

Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních

Location

Brno

ISBN

978-80-214-5614-3

Book

Proceedings of the 24 th Conference STUDENT EEICT 2018

Pages from

518

Pages to

522

Pages count

615

BibTex

@inproceedings{BUT147335,
  author="Adam {Gajdoš}",
  title="Local isolation of microscale defective areas in monocrysline silicon solar cells",
  booktitle="Proceedings of the 24 th Conference STUDENT EEICT 2018",
  year="2018",
  pages="518--522",
  publisher="Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních",
  address="Brno",
  isbn="978-80-214-5614-3"
}