Publication detail

Modified MIM Model of Titanium Dioxide Memristor for Reliable Simulations in SPICE

BIOLEK, D. BIOLKOVÁ, V. KOLKA, Z.

Original Title

Modified MIM Model of Titanium Dioxide Memristor for Reliable Simulations in SPICE

Type

conference paper

Language

English

Original Abstract

Modifications of the mathematical model of the TiO2 memristor, based on the approximations of Simmons' equations of tunnel effects in Metal-Insulator-Metal structures, are proposed. These modifications improve the performance of the model in the SPICE environment, taking into account the numerical limits of SPICE-family programs.

Keywords

memristor; tunnel effect; Pickett's model; SPICE

Authors

BIOLEK, D.; BIOLKOVÁ, V.; KOLKA, Z.

Released

12. 6. 2017

Publisher

IEEE

Location

USA

ISBN

978-1-5090-5052-9

Book

Proc. of 14th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD), 2017

Edition

1

Edition number

14

Pages from

1

Pages to

4

Pages count

4

URL

http://dx.doi.org/10.1109/SMACD.2017.7981564

BibTex

@inproceedings{BUT140991,
  author="Dalibor {Biolek} and Viera {Biolková} and Zdeněk {Kolka}",
  title="Modified MIM Model of Titanium Dioxide Memristor for Reliable Simulations in SPICE",
  booktitle="Proc. of 14th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD), 2017",
  year="2017",
  series="1",
  number="14",
  pages="1--4",
  publisher="IEEE",
  address="USA",
  doi="10.1109/SMACD.2017.7981564",
  isbn="978-1-5090-5052-9",
  url="http://dx.doi.org/10.1109/SMACD.2017.7981564"
}