Publication detail

TID in-situ measurement of temperature coefficient of various commercial voltage references

HOFMAN, J. HÁZE, J. SHARP, R.

Original Title

TID in-situ measurement of temperature coefficient of various commercial voltage references

English Title

TID in-situ measurement of temperature coefficient of various commercial voltage references

Type

conference paper

Language

en

Original Abstract

this work presents results of a total ionising dose experiment, during which commercial voltage references were irradiated and measured under different bias conditions using an in-situ technique. The automated test system allowed the output voltage of the voltage references to be measured at various temperatures during irradiation to 100 krad(Si) and the subsequent 7 day period of annealing.

English abstract

this work presents results of a total ionising dose experiment, during which commercial voltage references were irradiated and measured under different bias conditions using an in-situ technique. The automated test system allowed the output voltage of the voltage references to be measured at various temperatures during irradiation to 100 krad(Si) and the subsequent 7 day period of annealing.

Keywords

voltage reference, bandgap, buried Zener diode, data acquisition, A/D converter, TID test, in-situ, temperature coefficient, automated test equipment, test methods

Released

04.10.2017

Publisher

IEEE

ISBN

9781509002337

Book

Radecs 2017 proceedings

Pages from

1

Pages to

4

Pages count

4

URL

Documents

BibTex


@inproceedings{BUT140351,
  author="Jiří {Hofman} and Jiří {Háze} and Richard {Sharp}",
  title="TID in-situ measurement of temperature coefficient of various commercial voltage references",
  annote="this work presents results of a total ionising dose experiment, during which commercial voltage references were irradiated and measured under different bias conditions using an in-situ technique. The automated test system allowed the output voltage of the voltage references to be measured at various temperatures during irradiation to 100 krad(Si) and the subsequent 7 day period of annealing.",
  address="IEEE",
  booktitle="Radecs 2017 proceedings",
  chapter="140351",
  howpublished="online",
  institution="IEEE",
  year="2017",
  month="october",
  pages="1--4",
  publisher="IEEE",
  type="conference paper"
}