Publication detail

Temperature Dependence of Leakage Current Degradation of Tantalum Capacitors at High Electric Field

SEDLÁKOVÁ, V. ŠIKULA, J. KUPAROWITZ, M.

Original Title

Temperature Dependence of Leakage Current Degradation of Tantalum Capacitors at High Electric Field

English Title

Temperature Dependence of Leakage Current Degradation of Tantalum Capacitors at High Electric Field

Type

conference paper

Language

en

Original Abstract

Tantalum capacitors have been the preferred capacitor technology in long lifetime electronic devices thanks to the stability of its electric parameters and high reliability. However, long time application of elevated temperature and high electric field can result in capacitor leakage current increase in time. In this paper the effect of ions drift and diffusion at different temperatures on DCL degradation is analysed. DCL vs. time characteristics at temperatures from 65C to 155C were studied in order to determine the parameters of leakage current ageing. Results for four technologies are presented and it is shown that capacitor technology has crucial impact on DCL vs. time characteristics. These experiments are used to determine the background temperature at which DCL degradation starts with respect to the value of electric field. There exists background temperature under which the thermal excitation is not sufficient for give rise to the ions movement. This background temperature is higher than 105C for technology IS4 while for technology IS3 this temperature is 65C only.

English abstract

Tantalum capacitors have been the preferred capacitor technology in long lifetime electronic devices thanks to the stability of its electric parameters and high reliability. However, long time application of elevated temperature and high electric field can result in capacitor leakage current increase in time. In this paper the effect of ions drift and diffusion at different temperatures on DCL degradation is analysed. DCL vs. time characteristics at temperatures from 65C to 155C were studied in order to determine the parameters of leakage current ageing. Results for four technologies are presented and it is shown that capacitor technology has crucial impact on DCL vs. time characteristics. These experiments are used to determine the background temperature at which DCL degradation starts with respect to the value of electric field. There exists background temperature under which the thermal excitation is not sufficient for give rise to the ions movement. This background temperature is higher than 105C for technology IS4 while for technology IS3 this temperature is 65C only.

Keywords

tantalum capacitor; leakage current; high temparature degradation; high electric field degradation

Released

11.09.2017

Publisher

Ing. Vladislav Pokorný - LITERA BRNO, Tábor 43a, 612 00 Brno

Location

Česká republika

ISBN

978-80-905768-8-9

Book

PCSN 2017 Proceedings

Pages from

128

Pages to

136

Pages count

9

BibTex


@inproceedings{BUT139512,
  author="Vlasta {Sedláková} and Josef {Šikula} and Martin {Velísek}",
  title="Temperature Dependence of Leakage Current Degradation of Tantalum Capacitors at High Electric Field",
  annote="Tantalum capacitors have been the preferred capacitor technology in long lifetime electronic devices thanks to the stability of its electric parameters and high reliability. However, long time application of elevated temperature and high electric field can result in capacitor leakage current increase in time. In this paper the effect of ions drift and diffusion at different temperatures on DCL degradation is analysed. DCL vs. time characteristics at temperatures from 65C to 155C were studied in order to determine the parameters of leakage current ageing. Results for four technologies are presented and it is shown that capacitor technology has crucial impact on DCL vs. time characteristics. These experiments are used to determine the background temperature at which DCL degradation starts with respect to the value of electric field. There exists background temperature under which the thermal excitation is not sufficient for give rise to the ions movement. This background temperature is higher than 105C for technology IS4 while for technology IS3 this temperature is 65C only.",
  address="Ing. Vladislav Pokorný - LITERA BRNO, Tábor 43a, 612 00 Brno",
  booktitle="PCSN 2017 Proceedings",
  chapter="139512",
  howpublished="print",
  institution="Ing. Vladislav Pokorný - LITERA BRNO, Tábor 43a, 612 00 Brno",
  year="2017",
  month="september",
  pages="128--136",
  publisher="Ing. Vladislav Pokorný - LITERA BRNO, Tábor 43a, 612 00 Brno",
  type="conference paper"
}