Publication detail

Non-linearity and noise characterisation of thick-film resistors after high voltage stress

HÁJEK, K., SEDLÁKOVÁ, V., MAJZNER, J., HEFNER, Š., ŠIKULA, J.

Original Title

Non-linearity and noise characterisation of thick-film resistors after high voltage stress

English Title

Non-linearity and noise characterisation of thick-film resistors after high voltage stress

Type

conference paper

Language

en

Original Abstract

Experimental investigation on cermet thick film resistors shows, that non-linearity and 1/f noise spectral density is changed after high voltage stressing. Stressing method is based on the short current pulse from capacitor discharge. In the thick film resistor the current is flying through conductive chains composed of conducting grains and filaments separated by thin insulating layer. It is supposed, that multi-spot contact is created between contact and resistive layer. Non-linearity and noise spectral voltage density were measured before and after high voltage stress. Two mechanisms were observed. (i) Sample resistance, non-linearity and noise decreases after high voltage stressing. We suppose, that the effect of resistance, non-linearity and noise lowering is caused by filaments fritting. During this process thin isolating film between metallic grains is either doped or shorted. (ii) Sample resistance, non-linearity and noise increases after high voltage stressing. We suppose that in this case some conducting chains are destroyed because of local temperature increase in the spots with high value of local current density. While resistance changes are of the order of percent, the noise spectral density and non-linearity varies more then 10 percent. The changes of noise spectral density and non-linearity are more pronounced then resistance ones.

English abstract

Experimental investigation on cermet thick film resistors shows, that non-linearity and 1/f noise spectral density is changed after high voltage stressing. Stressing method is based on the short current pulse from capacitor discharge. In the thick film resistor the current is flying through conductive chains composed of conducting grains and filaments separated by thin insulating layer. It is supposed, that multi-spot contact is created between contact and resistive layer. Non-linearity and noise spectral voltage density were measured before and after high voltage stress. Two mechanisms were observed. (i) Sample resistance, non-linearity and noise decreases after high voltage stressing. We suppose, that the effect of resistance, non-linearity and noise lowering is caused by filaments fritting. During this process thin isolating film between metallic grains is either doped or shorted. (ii) Sample resistance, non-linearity and noise increases after high voltage stressing. We suppose that in this case some conducting chains are destroyed because of local temperature increase in the spots with high value of local current density. While resistance changes are of the order of percent, the noise spectral density and non-linearity varies more then 10 percent. The changes of noise spectral density and non-linearity are more pronounced then resistance ones.

RIV year

2004

Released

01.01.2004

Publisher

IMAPS CZ&SK Chapter

Location

Lanskroun

ISBN

80-239-2835-X

Book

Proceedings of the 3rd European Microelectronics and Packaging Symposium with Table Top Exhibition

Pages from

421

Pages to

426

Pages count

6

BibTex


@inproceedings{BUT12117,
  author="Karel {Hájek} and Vlasta {Sedláková} and Jiří {Majzner} and Štěpán {Hefner} and Josef {Šikula}",
  title="Non-linearity and noise characterisation of thick-film resistors after high voltage stress",
  annote="Experimental investigation on cermet thick film resistors shows, that non-linearity and 1/f noise spectral density is changed after high voltage stressing. Stressing method is based on the short current pulse from capacitor discharge. In the thick film resistor the current is flying through conductive chains composed of conducting grains and filaments separated by thin insulating layer. It is supposed, that multi-spot contact is created between contact and resistive layer. Non-linearity and noise spectral voltage density were measured before and after high voltage stress. Two mechanisms were observed. (i) Sample resistance, non-linearity and noise decreases after high voltage stressing. We suppose, that the effect of resistance, non-linearity and noise lowering is caused by filaments fritting. During this process thin isolating film between metallic grains is either doped or shorted. (ii) Sample resistance, non-linearity and noise increases after high voltage stressing. We suppose that in this case some conducting chains are destroyed because of local temperature increase in the spots with high value of local current density. While resistance changes are of the order of percent, the noise spectral density and non-linearity varies more then 10 percent. The changes of noise spectral density and non-linearity are more pronounced then resistance ones.",
  address="IMAPS CZ&SK Chapter",
  booktitle="Proceedings of the 3rd European Microelectronics and Packaging Symposium with Table Top Exhibition",
  chapter="12117",
  institution="IMAPS CZ&SK Chapter",
  year="2004",
  month="january",
  pages="421",
  publisher="IMAPS CZ&SK Chapter",
  type="conference paper"
}