Publication detail

Generalized Rule of Homothety of Ideal Memristors and Their Siblings

BIOLEK, D. BIOLEK, Z. BIOLKOVÁ, V. KOLKA, Z. ASCOLI, A. TETZLAFF, R.

Original Title

Generalized Rule of Homothety of Ideal Memristors and Their Siblings

English Title

Generalized Rule of Homothety of Ideal Memristors and Their Siblings

Type

conference paper

Language

en

Original Abstract

The pinched hysteresis loop area increasing with the square of the frequency of driving harmonic signal on the assumption of constant charge delivered within the half-period belongs to the less known fingerprints of ideal memristor. The paper proves that this fingerprint holds not only for the harmonic excitation: the v-i characteristic of a memristor driven by n-times accelerated and simultaneously n-times amplified signal of arbitrary waveform is a homothetic entity with respect to the original characteristic, with the homothetic center at the v-i origin and with the homothety ratio n. This rule holds for an arbitrary ideal memristor but not for an arbitrary general memristive element. Breaking this rule indicates reliably that the element analyzed is not an ideal memristor.

English abstract

The pinched hysteresis loop area increasing with the square of the frequency of driving harmonic signal on the assumption of constant charge delivered within the half-period belongs to the less known fingerprints of ideal memristor. The paper proves that this fingerprint holds not only for the harmonic excitation: the v-i characteristic of a memristor driven by n-times accelerated and simultaneously n-times amplified signal of arbitrary waveform is a homothetic entity with respect to the original characteristic, with the homothetic center at the v-i origin and with the homothety ratio n. This rule holds for an arbitrary ideal memristor but not for an arbitrary general memristive element. Breaking this rule indicates reliably that the element analyzed is not an ideal memristor.

Keywords

memristor; fingerprint; homothety; pinched hysteresis loop

RIV year

2015

Released

24.08.2015

Publisher

IEEE

Location

Trondheim, Norway

ISBN

9781479998777

Book

2015 European Conference on Circuit Theory and Design (ECCTD)

Pages from

1

Pages to

4

Pages count

4

URL

BibTex


@inproceedings{BUT118180,
  author="Dalibor {Biolek} and Zdeněk {Biolek} and Viera {Biolková} and Zdeněk {Kolka} and Alon {Ascoli} and Ronald {Tetzlaff}",
  title="Generalized Rule of Homothety of Ideal Memristors and Their Siblings",
  annote="The pinched hysteresis loop area increasing with the square of the frequency of driving harmonic signal on the assumption of constant charge delivered within the half-period belongs to the less known fingerprints of ideal memristor. The paper proves that this fingerprint holds not only for the harmonic excitation: the v-i characteristic of a memristor driven by n-times accelerated and simultaneously n-times amplified signal of arbitrary waveform is a homothetic entity with respect to the original characteristic, with the homothetic center at the v-i origin and with the homothety ratio n. This rule holds for an arbitrary ideal memristor but not for an arbitrary general memristive element. Breaking this rule indicates reliably that the element analyzed is not an ideal memristor.",
  address="IEEE",
  booktitle="2015 European Conference on Circuit Theory and Design (ECCTD)",
  chapter="118180",
  doi="10.1109/ECCTD.2015.7300084",
  howpublished="online",
  institution="IEEE",
  year="2015",
  month="august",
  pages="1--4",
  publisher="IEEE",
  type="conference paper"
}