Publication detail

A Contribution to the Evaluation of NAND Flash Memory

KADLEC, J. KUCHTA, R. NOVOTNÝ, R. KUCHTOVÁ, Z.

Original Title

A Contribution to the Evaluation of NAND Flash Memory

English Title

A Contribution to the Evaluation of NAND Flash Memory

Type

conference paper

Language

en

Original Abstract

NAND flash memories are well known for their uncomplicated structure, low cost, and high capacity. Their typical characteristics include architecture, sequential reading, and high density. NAND flash memory is a non-volatile type of memory and has low power consumption. The erasing of NAND Flash memory is based on a block-wise base. Since cells in a flash chip will fail after a limited number of writes, limited write endurance is a key characteristic of flash memory. There are many noise causes, such as read or program disturbances, retention process, charge leakage, trapping generation, etc. Preferably, all errors in the storage would be adjusted by the ECC algorithm. The conclusion of all mentioned parasitic factors creates a set of external and internal influences which affects variable behavior of memory in time. To prepare an overall analysis of all the important factors that affect the reliability and life-cycle endurance of NAND flash memories and describe the methodology for their evaluation was our main motivation for this paper.

English abstract

NAND flash memories are well known for their uncomplicated structure, low cost, and high capacity. Their typical characteristics include architecture, sequential reading, and high density. NAND flash memory is a non-volatile type of memory and has low power consumption. The erasing of NAND Flash memory is based on a block-wise base. Since cells in a flash chip will fail after a limited number of writes, limited write endurance is a key characteristic of flash memory. There are many noise causes, such as read or program disturbances, retention process, charge leakage, trapping generation, etc. Preferably, all errors in the storage would be adjusted by the ECC algorithm. The conclusion of all mentioned parasitic factors creates a set of external and internal influences which affects variable behavior of memory in time. To prepare an overall analysis of all the important factors that affect the reliability and life-cycle endurance of NAND flash memories and describe the methodology for their evaluation was our main motivation for this paper.

Keywords

flash memory; non-volatile; bit error rate; error correction code; architecture; reliability

RIV year

2015

Released

19.04.2015

Publisher

IARIA

Location

Barcelona, Spain

ISBN

978-1-61208-399-5

Book

ICONS2015 The First International Conference on Advances and Trends in Software Engineering - proceedings

Pages from

74

Pages to

78

Pages count

5

BibTex


@inproceedings{BUT115784,
  author="Jaroslav {Kadlec} and Radek {Kuchta} and Radovan {Novotný} and Zdeňka {Kuchtová}",
  title="A Contribution to the Evaluation of NAND Flash Memory",
  annote="NAND flash memories are well known for their uncomplicated structure, low cost, and high capacity. Their
typical characteristics include architecture, sequential reading, and high density. NAND flash memory is a non-volatile type of memory and has low power consumption. The erasing of NAND Flash memory is based on a block-wise base. Since cells in a flash chip will fail after a limited number of writes, limited write endurance is a key characteristic of flash memory. There are many noise causes, such as read or program disturbances, retention process, charge leakage, trapping generation, etc.
Preferably, all errors in the storage would be adjusted by the ECC algorithm. The conclusion of all mentioned parasitic factors creates a set of external and internal influences which affects variable behavior of memory in time. To prepare an overall analysis of all the important factors that affect the reliability and life-cycle endurance of NAND flash memories and describe the methodology for their evaluation was our main motivation for this paper.",
  address="IARIA",
  booktitle="ICONS2015 The First International Conference on Advances and
Trends in Software Engineering - proceedings",
  chapter="115784",
  howpublished="online",
  institution="IARIA",
  year="2015",
  month="april",
  pages="74--78",
  publisher="IARIA",
  type="conference paper"
}