Publication detail

Application of CBCM Method to Nonlinear Capacitor Characterization

Original Title

Application of CBCM Method to Nonlinear Capacitor Characterization

Czech Title

Application of CBCM Method to Nonlinear Capacitor Characterization

Language

cs

Original Abstract

The paper deals with an application of the CBCM method (Charge-Based Capacitance Measurements) to nonlinear capacitance characterization. Since its invention the CBCM method has been extensively used for on-chip interconnect linear capacitance measurements. However, it can be also used for nonlinear device characterization. Application of CBCM to 0.35-um CMOS gate-capacitance measurements is presented.

Czech abstract

The paper deals with an application of the CBCM method (Charge-Based Capacitance Measurements) to nonlinear capacitance characterization. Since its invention the CBCM method has been extensively used for on-chip interconnect linear capacitance measurements. However, it can be also used for nonlinear device characterization. Application of CBCM to 0.35-um CMOS gate-capacitance measurements is presented.

BibTex


@inproceedings{BUT11455,
  author="Tomáš {Sutorý} and Zdeněk {Kolka}",
  title="Application of CBCM Method to Nonlinear Capacitor Characterization",
  annote="The paper deals with an application of the CBCM method (Charge-Based Capacitance Measurements) to nonlinear capacitance characterization. Since its invention the CBCM method has been extensively used for on-chip interconnect linear capacitance measurements. However, it can be also used for nonlinear device characterization. Application of CBCM to 0.35-um CMOS gate-capacitance measurements is presented.",
  address="Poznan University of Technology, PTETiS",
  booktitle="International Conference on Signals and Electronic Systems",
  chapter="11455",
  institution="Poznan University of Technology, PTETiS",
  year="2004",
  month="september",
  pages="119",
  publisher="Poznan University of Technology, PTETiS",
  type="conference paper"
}