Publication detail

Realization of microscale detection and localization of low light emitting spots in monocrystalline silicon solar cells

DALLAEVA, D. TOMÁNEK, P. ŠKARVADA, P. GRMELA, L.

Original Title

Realization of microscale detection and localization of low light emitting spots in monocrystalline silicon solar cells

Czech Title

Realizace microskopické detekce a lokalizace slabě svítících defekt v solárním článku z monokrystalického křemíku

English Title

Realization of microscale detection and localization of low light emitting spots in monocrystalline silicon solar cells

Type

journal article

Language

en

Original Abstract

We report on detection and localization of imperfections in silicon solar cell bulk and surface with sub-micrometer resolution. To obtain this resolution, a family of imaging techniques including SNOM, SEM and AFM is often separately used for this purpose. In this paper we combine several of these proximal methods together, because each of them brings complimentary information about the imperfection. First, we note that SNOM images often contain distortions due to the interaction of the probe tip and sample. Therefore, we look for the possibility to circumvent this weakness and obtain more realistic images. In our experiments, we take advantage of the fact that defects or imperfections in silicon solar cell structures under reverse-bias voltage exhibit microscale low light emitting spots, and we apply an improved SNOM measurement to localize these spots. As a result, this system allows a localization and measurement of low light emission on microscale. Consequently, the size and shape of imperfections can also be determined.

Czech abstract

Článek referuje o detekci a lokalizaci vad v objemu a povrchu křemíkových solárních článcích buněk s rozlišením sub-mikrometrů. Pro získání tohoto řešení byla použita řada zobrazovacích technik, včetně SNOM, SEM a AFM. V tomto článku jsme spojili několik těchto metod blízkého pole, protože každá z nich přináší doplňkové informace o vadách. Musíme poznamenat, že SNOM obrazy často obsahují narušení vlivem interakce hrotu sondy se vzorkem. Proto jsme hledali možnost, jak tento nedostatek obejít a získat realističtější obrázky. V experimentech jsme využili toho, že vady nebo nedostatky ve strukturách monokrystalických solárních článků, které jsou zapojeny v režimu reverzního předpětí, slabě vyzařují z mikroskopických defektů, což poté umožní pomocí SNOM lokalizovat tyto skvrnky. Výsledkem je, že tento systém umožňuje lokalizaci a měření nízké emise světla v mikroměřítku. V důsledku toho může také být určen tvar a velikost těchto nedokonalostí.

English abstract

We report on detection and localization of imperfections in silicon solar cell bulk and surface with sub-micrometer resolution. To obtain this resolution, a family of imaging techniques including SNOM, SEM and AFM is often separately used for this purpose. In this paper we combine several of these proximal methods together, because each of them brings complimentary information about the imperfection. First, we note that SNOM images often contain distortions due to the interaction of the probe tip and sample. Therefore, we look for the possibility to circumvent this weakness and obtain more realistic images. In our experiments, we take advantage of the fact that defects or imperfections in silicon solar cell structures under reverse-bias voltage exhibit microscale low light emitting spots, and we apply an improved SNOM measurement to localize these spots. As a result, this system allows a localization and measurement of low light emission on microscale. Consequently, the size and shape of imperfections can also be determined.

Keywords

solar cell, silicon, monocrystalline emitting spot, detection, localization, microscale

RIV year

2015

Released

06.01.2015

Publisher

SPIE

Location

Bellingham, USA

Pages from

94501O-1

Pages to

94501O-7

Pages count

7

BibTex


@article{BUT111959,
  author="Dinara {Sobola} and Pavel {Tománek} and Pavel {Škarvada} and Lubomír {Grmela}",
  title="Realization of microscale detection and localization of low light emitting spots in monocrystalline silicon solar cells",
  annote="We report on detection and localization of imperfections in silicon solar cell bulk and surface with sub-micrometer resolution. To obtain this resolution, a family of imaging techniques including SNOM, SEM and AFM is often separately used for this purpose. In this paper we combine several of these proximal methods together, because each of them brings complimentary information about the imperfection. First, we note that SNOM images often contain distortions due to the interaction of the probe tip and sample. Therefore, we look for the possibility to circumvent this weakness and obtain more realistic images. In our experiments, we take advantage of the fact that defects or imperfections in silicon solar cell structures under reverse-bias voltage exhibit microscale low light emitting spots, and we apply an improved SNOM measurement to localize these spots. As a result, this system allows a localization and measurement of low light emission on microscale. Consequently, the size and shape of imperfections can also be determined.",
  address="SPIE",
  chapter="111959",
  doi="10.1117/12.2069504",
  institution="SPIE",
  number="9450",
  volume="9450",
  year="2015",
  month="january",
  pages="94501O-1--94501O-7",
  publisher="SPIE",
  type="journal article"
}