Publication detail

Local topography of optoelectronic substrates prepared by dry plasma etching process

DALLAEVA, D. RAMAZANOV, S. PROKOPYEVA, E. TOMÁNEK, P. GRMELA, L.

Original Title

Local topography of optoelectronic substrates prepared by dry plasma etching process

Czech Title

Lokální topografie optoelektronických substrátů připravené suchým plazmovým leptáním

English Title

Local topography of optoelectronic substrates prepared by dry plasma etching process

Type

journal article

Language

en

Original Abstract

In this work, the etch rate of silicon carbide and aluminum oxide were studied as a function of the angle etching material and flow of plasma. Al2O3 and SiC are important materials in the design of optical and electronic devices and the topography of the wafers has a large influence on the device quality. Argon was applied for the dry etching of Al2O3 and SiC wafers. The wafer slope for highest obtained etch is defined. Atomic force microscopy was used to good morphology control of etched wafers. Statistical and correlation analysis was applied to estimate the surface perfection. Interferometry allowed to control etching rate.

Czech abstract

V této práci byla studována rychlost leptání karbidu křemíku a oxidu hliníku jako funkce úhlu leptání materiálu a proudu plazmy. Al2O3 a SiC jsou významné materiály pro konstrukci optických a elektronických zařízení a topografie waferů má velký vliv na kvalitu zařízení. Argon byl použit pro suché leptání Al2O3 a SiC destiček. Statistická a korelační analýza byla použita k odhadu dokonalosti povrchu.

English abstract

In this work, the etch rate of silicon carbide and aluminum oxide were studied as a function of the angle etching material and flow of plasma. Al2O3 and SiC are important materials in the design of optical and electronic devices and the topography of the wafers has a large influence on the device quality. Argon was applied for the dry etching of Al2O3 and SiC wafers. The wafer slope for highest obtained etch is defined. Atomic force microscopy was used to good morphology control of etched wafers. Statistical and correlation analysis was applied to estimate the surface perfection. Interferometry allowed to control etching rate.

Keywords

etching, sapphire, silicon carbide, substrate, atomic force microscopy

RIV year

2015

Released

07.01.2015

Publisher

SPIE

Location

USA

Pages from

9442081

Pages to

9442086

Pages count

6

BibTex


@article{BUT111923,
  author="Dinara {Sobola} and Shihgasan {Ramazanov} and Elena {Prokopyeva} and Pavel {Tománek} and Lubomír {Grmela}",
  title="Local topography of optoelectronic substrates prepared by dry plasma etching process",
  annote="In this work, the etch rate of silicon carbide and aluminum oxide were studied as a function of the angle etching material and flow of plasma. Al2O3 and SiC are important materials in the design of optical and electronic devices and the topography of the wafers has a large influence on the device quality. Argon was applied for the dry etching of Al2O3 and SiC wafers. The wafer slope for highest obtained etch is defined. Atomic force microscopy was used to good morphology control of etched wafers. Statistical and correlation analysis was applied to estimate the surface perfection. Interferometry allowed to control etching rate.",
  address="SPIE",
  chapter="111923",
  doi="10.1117/12.2176367",
  institution="SPIE",
  number="9442",
  volume="9442",
  year="2015",
  month="january",
  pages="9442081--9442086",
  publisher="SPIE",
  type="journal article"
}