Publication detail

Microstructure defects in silicon solar cells

ŠKARVADA, P. KOKTAVÝ, P. SMITH, S. MACKŮ, R. ŠICNER, J. VONDRA, M. DALLAEVA, D. TOMÁNEK, P. GRMELA, L.

Original Title

Microstructure defects in silicon solar cells

Czech Title

Mikrostrukturové defekty v křemíkovývh solárních článcích

English Title

Microstructure defects in silicon solar cells

Type

conference paper

Language

en

Original Abstract

Parameters of silicon semiconductor devices are affected by the presence of defects. For the improvement of parameters and lifetime of the devices, the defect localization and characterization is important. This paper describes defects in large semiconductor devices, i.e. in crystalline silicon solar cell structure. The majority of defects has been investigated and localized using visible light emission under reversed bias measurements on microscale. Defects having impact on the sample current-voltage plot and reversed bias light emission characteristics are shown together with the micrographs of defective surface areas. Particular defects such as nonlinearity and local breakdown in current voltage plot were found in the solar cell structure. The most of the defects is associated with the surface inhomogenity but not all surface inhomogenities act as defects. Measurement at various temperatures allows identify the breakdown mechanism of the investigated defects.

Czech abstract

Parametry křemíkových polovodičových součástek jsou ovlivňovány defekty. Pro zlepšení kvality a zivostnosti součástek je vhodné znát místo a charakteristiku defektu. Článek se zabývá defekty ve velkém polovodiči - soálním křemíkovém článku. Velká část defektů byla zkoumána a lokalizována při použití viditelného světla, přičemž článek pracoval v režimu závěrného předpětí. Defekty se projeví ve V-A charakteristice současně s lokalizací defektu na ploše článku. Významnými defekty jsou nelinearity struktury a lokální průrazy proudu. Většina defektů pochází z nehomogenit na povrchu, ale ne všechny nehomogenity se chovají jako elektrický defekt. Meření za různých operačních teplot umožní identifikovat mechanizmy průrazu v zkoumaných defektech.

English abstract

Parameters of silicon semiconductor devices are affected by the presence of defects. For the improvement of parameters and lifetime of the devices, the defect localization and characterization is important. This paper describes defects in large semiconductor devices, i.e. in crystalline silicon solar cell structure. The majority of defects has been investigated and localized using visible light emission under reversed bias measurements on microscale. Defects having impact on the sample current-voltage plot and reversed bias light emission characteristics are shown together with the micrographs of defective surface areas. Particular defects such as nonlinearity and local breakdown in current voltage plot were found in the solar cell structure. The most of the defects is associated with the surface inhomogenity but not all surface inhomogenities act as defects. Measurement at various temperatures allows identify the breakdown mechanism of the investigated defects.

Keywords

solar cell, silicon, defect, inhomogeneity, breakdown, microsctructure, measurement

RIV year

2013

Released

25.11.2013

Publisher

Comenius University Bratislava

Location

Bratislava

ISBN

978-80-223-3501-0

Book

Proceedings of 8th Solid state surfaces and intefaces

Edition

1

Pages from

168

Pages to

169

Pages count

2

BibTex


@inproceedings{BUT103190,
  author="Pavel {Škarvada} and Pavel {Koktavý} and Steve J. {Smith} and Robert {Macků} and Jiří {Šicner} and Marek {Vondra} and Dinara {Sobola} and Pavel {Tománek} and Lubomír {Grmela}",
  title="Microstructure defects in silicon solar cells",
  annote="Parameters of silicon semiconductor devices are affected by the presence of defects. For the improvement of parameters and lifetime of the devices, the defect localization and characterization is important. This paper describes defects in large semiconductor devices, i.e. in crystalline silicon solar cell structure. The majority of defects has been investigated and localized using visible light emission under reversed bias measurements on microscale. Defects having impact on the sample current-voltage plot and reversed bias light emission characteristics are shown together with the micrographs of defective surface areas. Particular defects such as nonlinearity and local breakdown in current voltage plot were found in the solar cell structure. The most of the defects is associated with the surface inhomogenity but not all surface inhomogenities act as defects. Measurement at various temperatures allows identify the breakdown mechanism of the investigated defects.",
  address="Comenius University Bratislava",
  booktitle="Proceedings of 8th Solid state surfaces and intefaces",
  chapter="103190",
  edition="1",
  howpublished="print",
  institution="Comenius University Bratislava",
  year="2013",
  month="november",
  pages="168--169",
  publisher="Comenius University Bratislava",
  type="conference paper"
}