Publication detail

The model of metal oxide semiconductor transistor for first step of circuits design

ZÁVODNÝ, L.

Original Title

The model of metal oxide semiconductor transistor for first step of circuits design

Type

conference proceedings

Language

English

Original Abstract

This paper deals with new simply static model of Floating, N-channel Metal Oxide Semiconductor Transistor for special using in first-step of circuits design. Created model is maximal simple but with guaranteed accuracy.

Keywords

metal oxide semicondactor tranzistor model design

Authors

ZÁVODNÝ, L.

Released

5. 5. 2002

Publisher

Department of Radioelektronics, FEI SUT Bratislava

Location

Bratislava

ISBN

80-227-1700-2

Book

RADIOELEKTRONIKA 2002 - Conference Proceedings

Edition number

1

Pages from

140

Pages to

142

Pages count

3

BibTex

@proceedings{BUT64022,
  editor="Luděk {Závodný}",
  title="The model of metal oxide semiconductor transistor for first step of circuits design",
  year="2002",
  number="1",
  pages="3",
  publisher="Department of Radioelektronics, FEI SUT Bratislava",
  address="Bratislava",
  isbn="80-227-1700-2"
}