Publication detail

Measurement induced solar cell defect characterization

ŠKARVADA, P.

Original Title

Measurement induced solar cell defect characterization

English Title

Measurement induced solar cell defect characterization

Type

conference paper

Language

en

Original Abstract

Light emission from reverse biased solar cell can reveal structure inhomogenity. Although there is large variety of defects, this paper shows simple method for their basic classification. The method allows to determine imperfections caused by mechanical damage of sample (mi-crocracks and structure snapping). It is based on the measurement of light emission at fixed reverse voltage while the temperature is changing in the range of 20 K. Experimental light emission results are consequently correlated with light induced beam current map.

English abstract

Light emission from reverse biased solar cell can reveal structure inhomogenity. Although there is large variety of defects, this paper shows simple method for their basic classification. The method allows to determine imperfections caused by mechanical damage of sample (mi-crocracks and structure snapping). It is based on the measurement of light emission at fixed reverse voltage while the temperature is changing in the range of 20 K. Experimental light emission results are consequently correlated with light induced beam current map.

Keywords

solar cell, nondestructive testing, imperfections

RIV year

2011

Released

29.04.2011

Publisher

Novpress

Location

Brno

ISBN

978-80-214-4273-3

Book

proceedings of the 17th conference student eeict 2011 vol. 3

Edition number

1

Pages from

386

Pages to

390

Pages count

5

BibTex


@inproceedings{BUT36027,
  author="Pavel {Škarvada}",
  title="Measurement induced solar cell defect characterization",
  annote="Light emission from reverse biased solar cell can reveal structure inhomogenity. Although there is large variety of defects, this paper shows simple method for their basic classification. The method allows to determine imperfections caused by mechanical damage of sample (mi-crocracks and structure snapping). It is based on the measurement of light emission at fixed reverse voltage while the temperature is changing in the range of 20 K. Experimental light emission results are consequently correlated with light induced beam current map.",
  address="Novpress",
  booktitle="proceedings of the 17th conference student eeict 2011 vol. 3",
  chapter="36027",
  howpublished="print",
  institution="Novpress",
  year="2011",
  month="april",
  pages="386--390",
  publisher="Novpress",
  type="conference paper"
}