Publication detail

Noise Characterization Setup for Organic Field Effect Transistors

KRČÁL, O. KOKTAVÝ, P. KNÁPEK, A.

Original Title

Noise Characterization Setup for Organic Field Effect Transistors

English Title

Noise Characterization Setup for Organic Field Effect Transistors

Type

conference paper

Language

en

Original Abstract

In general organic field effect transistors (FETs) are thin film transistors of a MISFET (metal-insulator-semiconductor) geometry. The transistor may include an inorganic substrate (which may also serve as Gate electrode), insulator or electrodes. As there has not been many articles published yet related to the area of noise analysis of organic semiconductors, following information are crucial basement for the future noise investigation and provide knowledge to prepare and set up the low noise unit for organic structure measurement, which can be used for either organic unipole device or organic dipole device with one common electrode characterization

English abstract

In general organic field effect transistors (FETs) are thin film transistors of a MISFET (metal-insulator-semiconductor) geometry. The transistor may include an inorganic substrate (which may also serve as Gate electrode), insulator or electrodes. As there has not been many articles published yet related to the area of noise analysis of organic semiconductors, following information are crucial basement for the future noise investigation and provide knowledge to prepare and set up the low noise unit for organic structure measurement, which can be used for either organic unipole device or organic dipole device with one common electrode characterization

Keywords

Organic semiconductor, OFET, noise characterization, pentacene

RIV year

2010

Released

01.09.2010

Publisher

Brno University of Technology

Location

Brno

ISBN

978-80-214-4138-5

Book

IMAPS CS International Conference 2010 - Proceedings

Pages from

185

Pages to

189

Pages count

5

BibTex


@inproceedings{BUT34628,
  author="Ondřej {Krčál} and Pavel {Koktavý} and Alexandr {Knápek}",
  title="Noise Characterization Setup for Organic Field Effect Transistors",
  annote="In general organic field effect transistors (FETs) are thin film transistors of a MISFET (metal-insulator-semiconductor) geometry. The transistor may include an inorganic substrate (which may also serve as Gate electrode), insulator or electrodes. As there has not been many articles published yet related to the area of noise analysis of organic semiconductors, following information are crucial basement for the future noise investigation and provide knowledge to prepare and set up the low noise unit for organic structure measurement, which can be used for either organic unipole device or organic dipole device with one common electrode characterization",
  address="Brno University of Technology",
  booktitle="IMAPS CS International Conference 2010 - Proceedings",
  chapter="34628",
  howpublished="print",
  institution="Brno University of Technology",
  year="2010",
  month="september",
  pages="185--189",
  publisher="Brno University of Technology",
  type="conference paper"
}