Publication detail

Noise spectroscopy of high resistance CdTe detectors

ANDREEV, A. ŠIK, O. GRMELA, L.

Original Title

Noise spectroscopy of high resistance CdTe detectors

English Title

Noise spectroscopy of high resistance CdTe detectors

Type

conference paper

Language

en

Original Abstract

Previously the analysis of noise characteristics of CdTe single crystals was carried out. For measurements were used CdTe long bars with four contacts, two current and two voltage contacts. The analysis showed that the source of the excess value of 1/f noise spectral density is depleted region of samples at metal-semiconductor junction [1,2]. These samples were high doped and therefore were lowohmic. For increasing production efficiency of both detectors and substrates, the growth of largediameter, inclusion and precipitate-free single crystals with low concentration of native and foreign defects is necessary [3]. This paper presents the noise characteristics of high resistance CdTe radiation detectors. Noise spectroscopy of two CdTe detectors shows that the resulting noise characteristic is given by superposition of 1/f noise and generationrecombination noise.

English abstract

Previously the analysis of noise characteristics of CdTe single crystals was carried out. For measurements were used CdTe long bars with four contacts, two current and two voltage contacts. The analysis showed that the source of the excess value of 1/f noise spectral density is depleted region of samples at metal-semiconductor junction [1,2]. These samples were high doped and therefore were lowohmic. For increasing production efficiency of both detectors and substrates, the growth of largediameter, inclusion and precipitate-free single crystals with low concentration of native and foreign defects is necessary [3]. This paper presents the noise characteristics of high resistance CdTe radiation detectors. Noise spectroscopy of two CdTe detectors shows that the resulting noise characteristic is given by superposition of 1/f noise and generationrecombination noise.

Keywords

1/f noise

RIV year

2010

Released

12.05.2010

Publisher

Piotr Firek

Location

Warsaw

ISBN

978-83-7207-874-2

Book

33rd International Spring Seminar on Electronics Technology

Pages from

63

Pages to

64

Pages count

2

Documents

BibTex 


@inproceedings{BUT34302,
  author="Alexey {Andreev} and Ondřej {Šik} and Lubomír {Grmela}",
  title="Noise spectroscopy of high resistance CdTe detectors",
  annote="Previously the analysis of noise characteristics of CdTe single crystals was carried out.
For measurements were used CdTe long bars with four contacts, two current and two voltage
contacts. The analysis showed that the source of the excess value of 1/f noise spectral density is
depleted region of samples at metal-semiconductor junction [1,2]. These samples were high doped
and therefore were lowohmic. For increasing production efficiency of both detectors and substrates,
the growth of largediameter, inclusion and precipitate-free single crystals with low concentration of
native and foreign defects is necessary [3]. This paper presents the noise characteristics of high
resistance CdTe radiation detectors. Noise spectroscopy of two CdTe detectors shows that the
resulting noise characteristic is given by superposition of 1/f noise and generationrecombination
noise.",
  address="Piotr Firek",
  booktitle="33rd International Spring Seminar on Electronics Technology",
  chapter="34302",
  howpublished="print",
  institution="Piotr Firek",
  year="2010",
  month="may",
  pages="63--64",
  publisher="Piotr Firek",
  type="conference paper"
}