Publication detail

Impact ionization in GaAsP PN junctions

KOKTAVÝ, P. KOKTAVÝ, B.

Original Title

Impact ionization in GaAsP PN junctions

English Title

Impact ionization in GaAsP PN junctions

Type

conference paper

Language

en

Original Abstract

Currently, the occurrence of microplasma regions in PN junctions is attributed to crystal lattice imperfections. As a rule, these regions feature lower strong-field avalanche ionization breakdown voltages than other homogeneous junction regions. The existence of such regions may lead to local avalanche breakdowns occurring in reverse-biased PN junctions at certain voltages. Macroscopically, these breakdowns are manifested as microplasma noise. Studying the current conductivity bi-stable mechanism thus may be used as an efficient tool to evaluate the PN junction inhomogeneity.

English abstract

Currently, the occurrence of microplasma regions in PN junctions is attributed to crystal lattice imperfections. As a rule, these regions feature lower strong-field avalanche ionization breakdown voltages than other homogeneous junction regions. The existence of such regions may lead to local avalanche breakdowns occurring in reverse-biased PN junctions at certain voltages. Macroscopically, these breakdowns are manifested as microplasma noise. Studying the current conductivity bi-stable mechanism thus may be used as an efficient tool to evaluate the PN junction inhomogeneity.

Keywords

Impact ionization, microplasma noise, diagnostics, PN junction

RIV year

2007

Released

04.09.2007

Publisher

CERM

Location

Brno

ISBN

978-80-7204-537-2

Book

Physical and Material Engineering 2007, International Workshop

Pages from

131

Pages to

134

Pages count

4

BibTex


@inproceedings{BUT27975,
  author="Pavel {Koktavý} and Bohumil {Koktavý}",
  title="Impact ionization in GaAsP PN junctions",
  annote="Currently, the occurrence of microplasma regions in PN junctions is attributed to crystal lattice imperfections. As a rule, these regions feature lower strong-field avalanche ionization breakdown voltages than other homogeneous junction regions. The existence of such regions may lead to local avalanche breakdowns occurring in reverse-biased PN junctions at certain voltages. Macroscopically, these breakdowns are manifested as microplasma noise. Studying the current conductivity bi-stable mechanism thus may be used as an efficient tool to evaluate the PN junction inhomogeneity.",
  address="CERM",
  booktitle="Physical and Material Engineering 2007, International Workshop",
  chapter="27975",
  institution="CERM",
  year="2007",
  month="september",
  pages="131--134",
  publisher="CERM",
  type="conference paper"
}