Publication detail

RTS Noise and quantum transitions in submicron MOSFETs

ŠIKULA, J. PAVELKA, J. SEDLÁKOVÁ, V. HLÁVKA, J. TACANO, M. TOITA, M.

Original Title

RTS Noise and quantum transitions in submicron MOSFETs

English Title

RTS Noise and quantum transitions in submicron MOSFETs

Type

conference paper

Language

en

Original Abstract

We compare two models of charge carrier capture and emission in silicon MOSFET, which is a source of RTS noise. In the SiO2 gate insulating layer and its interface with Si channel there is a high number of oxygen vacancies, creating localised states and traps. Electron exchange between channel and traps within several nanometers distance is given by tunnelling processes and leads to generation of 1/f noise. Two possible mechanisms of electron tunnelling are discussed and theoretical results are compared to experimental dependence of capture and emission parameters as a function of gate and drain voltage (electric field intensity) and temperature.

English abstract

We compare two models of charge carrier capture and emission in silicon MOSFET, which is a source of RTS noise. In the SiO2 gate insulating layer and its interface with Si channel there is a high number of oxygen vacancies, creating localised states and traps. Electron exchange between channel and traps within several nanometers distance is given by tunnelling processes and leads to generation of 1/f noise. Two possible mechanisms of electron tunnelling are discussed and theoretical results are compared to experimental dependence of capture and emission parameters as a function of gate and drain voltage (electric field intensity) and temperature.

Keywords

RTS noise, 1/f noise, MOSFET

RIV year

2007

Released

15.11.2007

Publisher

VUT

Location

Brno

ISBN

978-80-7355-078-3

Book

New Trends in Physics

Pages from

138

Pages to

141

Pages count

4

BibTex


@inproceedings{BUT27881,
  author="Josef {Šikula} and Jan {Pavelka} and Vlasta {Sedláková} and Jan {Hlávka} and Munecazu {Tacano} and Masato {Toita}",
  title="RTS Noise and quantum transitions in submicron MOSFETs",
  annote="We compare two models of charge carrier capture and emission in silicon MOSFET, which is a source of RTS noise. In the SiO2 gate insulating layer and its interface with Si channel there is a high number of oxygen vacancies, creating localised states and traps. Electron exchange between channel and traps within several nanometers distance is given by tunnelling processes and leads to generation of 1/f noise. Two possible mechanisms of electron tunnelling are discussed and theoretical results are compared to experimental dependence of capture and emission parameters as a function of gate and drain voltage (electric field intensity) and temperature.",
  address="VUT",
  booktitle="New Trends in Physics",
  chapter="27881",
  institution="VUT",
  year="2007",
  month="november",
  pages="138--141",
  publisher="VUT",
  type="conference paper"
}