Publication detail

Fast Transients in Testing of Silicon Solar Cells

J.Bousek, A. Poruba

Original Title

Fast Transients in Testing of Silicon Solar Cells

English Title

Fast Transients in Testing of Silicon Solar Cells

Type

conference paper

Language

en

Original Abstract

In solar cell diagnostic the parameters as the reverse breakdown voltage, depletion layer width and capacitance, serial and parallel resistance and lifetime of minority carriers are of great importance. Characterization of solar cells based on evaluation of solar cell response to fast transients is described. The measurement and evaluation procedure is very simple and no expensive devices are needed. Because relatively high doping level by standard silicon solar cells a voltage bias in the range 400 – 500 mV is needed.to cancel the influence of the depletion layer capacitance The voltage bias was made with dark current bias or with light bias.

English abstract

In solar cell diagnostic the parameters as the reverse breakdown voltage, depletion layer width and capacitance, serial and parallel resistance and lifetime of minority carriers are of great importance. Characterization of solar cells based on evaluation of solar cell response to fast transients is described. The measurement and evaluation procedure is very simple and no expensive devices are needed. Because relatively high doping level by standard silicon solar cells a voltage bias in the range 400 – 500 mV is needed.to cancel the influence of the depletion layer capacitance The voltage bias was made with dark current bias or with light bias.

Keywords

Krystalický křemík, Solární články, Doba života minoritních nosičů, Průrazné napětí

RIV year

2006

Released

14.09.2006

Publisher

Nakl. Z. Novotný

ISBN

80-214-3246-2

Book

Proceedings EDS °06

Pages from

461

Pages to

466

Pages count

6

BibTex


@inproceedings{BUT24716,
  author="Jaroslav {Boušek} and Aleš {Poruba}",
  title="Fast Transients in Testing of Silicon Solar Cells",
  annote="In solar cell diagnostic the parameters as the reverse breakdown voltage, depletion layer width and capacitance, serial and parallel resistance and lifetime of minority carriers are of great importance. Characterization of solar cells based on evaluation of solar cell response to fast transients is described. The measurement and evaluation procedure is very simple and no expensive devices are needed. Because relatively high doping level by standard silicon solar cells a voltage bias in the range 400 – 500 mV is needed.to cancel the influence of the depletion layer capacitance The voltage bias was made with dark current bias or with light bias.",
  address="Nakl. Z. Novotný",
  booktitle="Proceedings EDS °06",
  chapter="24716",
  institution="Nakl. Z. Novotný",
  year="2006",
  month="september",
  pages="461",
  publisher="Nakl. Z. Novotný",
  type="conference paper"
}