Publication detail

DIOS simulation of ion implantation

RECMAN Milan

Original Title

DIOS simulation of ion implantation

English Title

DIOS simulation of ion implantation

Type

conference paper

Language

en

Original Abstract

The example of using process simulator DIOS to compare data of individual implantation and corresponding temperature annealing steps within diode structure creation is presented. The method based on the DIOS TECPLOT-ISE link enables to form an effective tool to compare data of individual process steps simulations as ion implantations and other. The described example of diode process steps simulation uses this link to compare total boron concentrations throghout the process. The individual DIOS process simulation steps including final boron profile creation are described. TECPLOT-ISE graphical postprocessor is used to display and compare the individual total boron concentrations.

English abstract

The example of using process simulator DIOS to compare data of individual implantation and corresponding temperature annealing steps within diode structure creation is presented. The method based on the DIOS TECPLOT-ISE link enables to form an effective tool to compare data of individual process steps simulations as ion implantations and other. The described example of diode process steps simulation uses this link to compare total boron concentrations throghout the process. The individual DIOS process simulation steps including final boron profile creation are described. TECPLOT-ISE graphical postprocessor is used to display and compare the individual total boron concentrations.

Released

01.01.2006

Publisher

Nakl. Novotný

Location

Brno

ISBN

960-8025-99-8

Book

Electronic System Design 2006, Socrates International Conference Proceedings Chania, October 16 – 17, 2006, Greece

Pages from

80

Pages to

83

Pages count

4

BibTex


@inproceedings{BUT24695,
  author="Milan {Recman}",
  title="DIOS simulation of ion implantation",
  annote="The example of using process simulator DIOS to compare data of individual implantation and corresponding temperature annealing steps within diode structure creation is presented. The method based on the DIOS TECPLOT-ISE link enables to form an effective tool to compare data of individual process steps simulations as ion implantations and other. The described example of diode process steps simulation uses this link to compare total boron concentrations throghout the process. The individual DIOS process simulation steps including final boron profile creation are described. TECPLOT-ISE graphical postprocessor is used to display and compare the individual total boron concentrations.",
  address="Nakl. Novotný",
  booktitle="Electronic System Design 2006, Socrates International Conference Proceedings Chania, October 16 – 17, 2006, Greece",
  chapter="24695",
  institution="Nakl. Novotný",
  year="2006",
  month="january",
  pages="80",
  publisher="Nakl. Novotný",
  type="conference paper"
}