Publication detail

Silicon-germanium heterojunction bipolar transistor: Simulation in Mathematica

Horák Michal, Hejátková Edita

Original Title

Silicon-germanium heterojunction bipolar transistor: Simulation in Mathematica

English Title

Silicon-germanium heterojunction bipolar transistor: Simulation in Mathematica

Type

conference paper

Language

en

Original Abstract

The aim of this paper is to describe the simple simulation program developed for the student computer training in varous courses on semiconductor devices and structures. All calculations and graphical outputs are carried out in Mathematica.

English abstract

The aim of this paper is to describe the simple simulation program developed for the student computer training in varous courses on semiconductor devices and structures. All calculations and graphical outputs are carried out in Mathematica.

Keywords

SiGe, heterojunction bipolar transistor, simulation

RIV year

2006

Released

15.09.2006

Publisher

Ing. Zdeněk Novotný

Location

Brno

ISBN

80-214-3246-2

Book

IMAPS EDS CS International Conference 2006 Proceedings

Pages from

360

Pages to

365

Pages count

6

BibTex


@inproceedings{BUT24638,
  author="Michal {Horák} and Edita {Hejátková}",
  title="Silicon-germanium heterojunction bipolar transistor: Simulation in Mathematica",
  annote="The aim of this paper is to describe the simple simulation program developed for the student computer training in varous courses on semiconductor devices and structures. All calculations and graphical outputs are carried out in Mathematica.",
  address="Ing. Zdeněk Novotný",
  booktitle="IMAPS EDS CS International Conference 2006 Proceedings",
  chapter="24638",
  institution="Ing. Zdeněk Novotný",
  year="2006",
  month="september",
  pages="360",
  publisher="Ing. Zdeněk Novotný",
  type="conference paper"
}