Publication detail

Charge Carrier Transport in NbO and Ta Capacitors in Temperature Range 100 to 300 K

ŠIKULA, J. SEDLÁKOVÁ, V. HLÁVKA, J. SITA, Z.

Original Title

Charge Carrier Transport in NbO and Ta Capacitors in Temperature Range 100 to 300 K

English Title

Charge Carrier Transport in NbO and Ta Capacitors in Temperature Range 100 to 300 K

Type

conference paper

Language

en

Original Abstract

An analysis of charge carrier transport in NbO and Ta capacitors was performed at temperature range 100 to 300 K. VA characteristics in normal and reverse mode have been measured and characteristics important for formulation of MIS structure have been obtained to prove that in reverse mode a threshold voltage exists at which a potential barrier in Nb2O5 and Ta2O5 dielectrics depends on temperature. If the capacitor is polarized in the normal mode, (with the NbO and Ta electrode positive), ohmic, Poole-Frenkel and tunneling are the dominant conduction mechanisms. Current components dependent on Boltzmann distribution of charge carriers decrease for decreasing temperature. It concerns to Schottky, Poole-Frenkel and ohmic current components. For temperature lower than 200K these components are lower than the tunneling one and VA characteristic is described by charge carrier tunneling only. Threshold voltage is dependent on barrier at Nb2O5 – MnO2 interface for normal mode and NbO - Nb2O5 for reverse mode. Similar result was found for Ta capacitors. These capacitors can be used as bipolar one at temperatures lover than 200 K. Low temperature treatments does not worsen room temperature VA characteristics.

English abstract

An analysis of charge carrier transport in NbO and Ta capacitors was performed at temperature range 100 to 300 K. VA characteristics in normal and reverse mode have been measured and characteristics important for formulation of MIS structure have been obtained to prove that in reverse mode a threshold voltage exists at which a potential barrier in Nb2O5 and Ta2O5 dielectrics depends on temperature. If the capacitor is polarized in the normal mode, (with the NbO and Ta electrode positive), ohmic, Poole-Frenkel and tunneling are the dominant conduction mechanisms. Current components dependent on Boltzmann distribution of charge carriers decrease for decreasing temperature. It concerns to Schottky, Poole-Frenkel and ohmic current components. For temperature lower than 200K these components are lower than the tunneling one and VA characteristic is described by charge carrier tunneling only. Threshold voltage is dependent on barrier at Nb2O5 – MnO2 interface for normal mode and NbO - Nb2O5 for reverse mode. Similar result was found for Ta capacitors. These capacitors can be used as bipolar one at temperatures lover than 200 K. Low temperature treatments does not worsen room temperature VA characteristics.

RIV year

2006

Released

01.01.2006

Publisher

Electronic Components, Assemblies and Materials Association

Location

Bad Homburg, Německo

ISBN

0-7908-0110-8

Book

Proceeding of CARTS Europe 2006 - 20th annual passive components symposium

Pages from

189

Pages to

198

Pages count

10

BibTex


@inproceedings{BUT24159,
  author="Josef {Šikula} and Vlasta {Sedláková} and Jan {Hlávka} and Zdeněk {Sita}",
  title="Charge Carrier Transport in NbO and Ta Capacitors in Temperature Range 100 to 300 K",
  annote="An analysis of charge carrier transport in NbO and Ta capacitors was performed at temperature range 100 to 300 K. VA characteristics in normal and reverse mode have been measured and characteristics important for formulation of MIS structure have been obtained to prove that in reverse mode a threshold voltage exists at which a potential barrier in Nb2O5 and Ta2O5 dielectrics depends on temperature. If the capacitor is polarized in the normal mode, (with the NbO and Ta electrode positive), ohmic, Poole-Frenkel and tunneling are the dominant conduction mechanisms. Current components dependent on Boltzmann distribution of charge carriers decrease for decreasing temperature. It concerns to Schottky, Poole-Frenkel and ohmic current components. For temperature lower than 200K these components are lower than the tunneling one and VA characteristic is described by charge carrier tunneling only. Threshold voltage is dependent on barrier at Nb2O5 – MnO2 interface for normal mode and NbO - Nb2O5 for reverse mode. Similar result was found for Ta capacitors. These capacitors can be used as bipolar one at temperatures lover than 200 K. Low temperature treatments does not worsen room temperature VA characteristics.",
  address="Electronic Components, Assemblies and Materials Association",
  booktitle="Proceeding of CARTS Europe 2006 - 20th annual passive components symposium",
  chapter="24159",
  institution="Electronic Components, Assemblies and Materials Association",
  year="2006",
  month="january",
  pages="189",
  publisher="Electronic Components, Assemblies and Materials Association",
  type="conference paper"
}