Publication detail

SCALING DOWN AND LOW FREQUENCY NOISE TESTING OF SUBMICRON MOSFET'S

HAVRÁNEK, J.

Original Title

SCALING DOWN AND LOW FREQUENCY NOISE TESTING OF SUBMICRON MOSFET'S

English Title

SCALING DOWN AND LOW FREQUENCY NOISE TESTING OF SUBMICRON MOSFET'S

Type

conference paper

Language

en

Original Abstract

A large amount of experimental results show that for MOSFET's with channel area exceed-ing 10 mikrom2, 1/f noise is clearly present. On the other hand, for transistors of area less than 1 mikrom2, Random Telegraph Signals (RTS) are appearing, giving rise to lorentzian spectra. A relation is established between the level of 1/f noise and the defectiveness of the device. An important result concerns the reliability of integrated circuits: beyond a certain limit of scaling down, one can show that it is impossible to predict, with a given accuracy, the low frequency noise of an individual transistor. A critical question also arises: are the RTS's the ultimate components of the 1/f noise In this paper, we emphasize the interest of observing extensively intermediate cases MOSFET's (i.e., with a surface of a few mikrom2). In these cases, several traps are involved, leading to single or multi level temporal signals.[

English abstract

A large amount of experimental results show that for MOSFET's with channel area exceed-ing 10 mikrom2, 1/f noise is clearly present. On the other hand, for transistors of area less than 1 mikrom2, Random Telegraph Signals (RTS) are appearing, giving rise to lorentzian spectra. A relation is established between the level of 1/f noise and the defectiveness of the device. An important result concerns the reliability of integrated circuits: beyond a certain limit of scaling down, one can show that it is impossible to predict, with a given accuracy, the low frequency noise of an individual transistor. A critical question also arises: are the RTS's the ultimate components of the 1/f noise In this paper, we emphasize the interest of observing extensively intermediate cases MOSFET's (i.e., with a surface of a few mikrom2). In these cases, several traps are involved, leading to single or multi level temporal signals.[

Keywords

1/f noise, Mosfet, scaling down

RIV year

2007

Released

26.04.2007

Publisher

VUTIUM

Location

Brno

Pages from

4

Pages to

8

Pages count

4

BibTex


@inproceedings{BUT24030,
  author="Jan {Havránek}",
  title="SCALING DOWN AND LOW FREQUENCY NOISE TESTING OF SUBMICRON MOSFET'S",
  annote="A large amount of experimental results show that for MOSFET's with channel area exceed-ing 10 mikrom2, 1/f noise is clearly present.  On the other hand, for transistors of area less than 1 mikrom2, Random Telegraph Signals (RTS) are appearing, giving rise to lorentzian spectra. A relation is established between the level of 1/f noise and the defectiveness of the device. An important result concerns the reliability of integrated circuits: beyond a certain limit of scaling down, one can show that it is impossible to predict, with a given accuracy, the low frequency noise of an individual transistor. A critical question also arises: are the RTS's the ultimate components of the 1/f noise In this paper, we emphasize the interest of observing extensively intermediate cases MOSFET's (i.e., with a surface of a few mikrom2). In these cases, several traps are involved, leading to single or multi level temporal signals.[",
  address="VUTIUM",
  booktitle="Studentská soutěž a konference STUDENT EEICT 2007",
  chapter="24030",
  institution="VUTIUM",
  year="2007",
  month="april",
  pages="4--8",
  publisher="VUTIUM",
  type="conference paper"
}