Publication detail

Non-Poisson Process in RTS-like noise

PAVELKA, J. ŠIKULA, J. TACANO, M.

Original Title

Non-Poisson Process in RTS-like noise

English Title

Non-Poisson Process in RTS-like noise

Type

conference paper

Language

en

Original Abstract

RTS noise was measured in wide range of semiconductor devices, comprising Si MOSFETs and GaN/AlGaN and InGaAs/InAlAs heterostructures. Statistical analysis of RTS noise in InGaAs sample revealed considerable correlation of subsequent pulse duration.

English abstract

RTS noise was measured in wide range of semiconductor devices, comprising Si MOSFETs and GaN/AlGaN and InGaAs/InAlAs heterostructures. Statistical analysis of RTS noise in InGaAs sample revealed considerable correlation of subsequent pulse duration.

Keywords

RTS noise, 1/f noise, MOSFET, HFET, InGaAs, GaN

RIV year

2007

Released

10.09.2007

Publisher

AIP

Location

Tokio

ISBN

978-0-7354-0432-8

Book

Proc. ICNF 2007 AIP Conf. Proc. Vol. 922

Pages from

111

Pages to

114

Pages count

4

BibTex


@inproceedings{BUT23032,
  author="Jan {Pavelka} and Josef {Šikula} and Munecazu {Tacano}",
  title="Non-Poisson Process in RTS-like noise",
  annote="RTS noise was measured in wide range of semiconductor devices, comprising Si MOSFETs and GaN/AlGaN and InGaAs/InAlAs heterostructures. Statistical analysis of RTS noise in InGaAs sample revealed considerable correlation of subsequent pulse duration.",
  address="AIP",
  booktitle="Proc. ICNF 2007 AIP Conf. Proc. Vol. 922",
  chapter="23032",
  institution="AIP",
  year="2007",
  month="september",
  pages="111--114",
  publisher="AIP",
  type="conference paper"
}