Publication detail

SiNx and SiO2 as passivation layers for high grade solar cells.

Ondrej Hegr, Jaroslav Bousek

Original Title

SiNx and SiO2 as passivation layers for high grade solar cells.

English Title

SiNx and SiO2 as passivation layers for high grade solar cells.

Type

conference paper

Language

en

Original Abstract

In the semiconductor and photovoltaic aplication, the surface passivation is a very important process for adjustment of silicon surface properties. It brings reduction of recombination centres that arise from previous technology steps. The surface recombination is decreased and the effective lifetime is increased. For passivation layers deposition the more methods are possible. The most important method is PECVD (Plasma-Enhanced Chemical Vapor Deposition) and LPCVD (Low-Pressure Chemical Vapor Deposition). In this paper, the passivation layers are deposited by means of reactive magnetron sputtering.

English abstract

In the semiconductor and photovoltaic aplication, the surface passivation is a very important process for adjustment of silicon surface properties. It brings reduction of recombination centres that arise from previous technology steps. The surface recombination is decreased and the effective lifetime is increased. For passivation layers deposition the more methods are possible. The most important method is PECVD (Plasma-Enhanced Chemical Vapor Deposition) and LPCVD (Low-Pressure Chemical Vapor Deposition). In this paper, the passivation layers are deposited by means of reactive magnetron sputtering.

Keywords

surface passivation, solar cell, deposition of SiN and SiO2, recombination

RIV year

2005

Released

23.09.2005

Publisher

nakl. Z. Novotný

Location

Brno

ISBN

80-214-3042-7

Book

Socrates workshop 2005

Edition number

1

Pages from

186

Pages to

191

Pages count

6

BibTex


@inproceedings{BUT16445,
  author="Ondřej {Hégr} and Jaroslav {Boušek}",
  title="SiNx and SiO2 as passivation layers for high grade solar cells.",
  annote="In the semiconductor and photovoltaic aplication, the surface passivation is a very important process for adjustment of silicon surface properties. It brings reduction of recombination centres that arise from previous technology steps. The surface recombination is decreased and the effective lifetime is increased. For passivation layers deposition the more methods are possible. The most important method is PECVD (Plasma-Enhanced Chemical Vapor Deposition) and LPCVD (Low-Pressure Chemical Vapor Deposition). In this paper, the passivation layers are deposited by means of reactive magnetron sputtering.",
  address="nakl. Z. Novotný",
  booktitle="Socrates workshop 2005",
  chapter="16445",
  institution="nakl. Z. Novotný",
  year="2005",
  month="september",
  pages="186",
  publisher="nakl. Z. Novotný",
  type="conference paper"
}