Publication detail

RF Single-Pole Double-Throw Switch Based on Two-Port Memistor

VÁVRA, J. BAJER, J. BIOLEK, D.

Original Title

RF Single-Pole Double-Throw Switch Based on Two-Port Memistor

Type

conference paper

Language

English

Original Abstract

The paper introduces a novel memristive two-port element for an efficient construction of Radio Frequency (RF) single-pole double-throw (SPDT) switches, the so-called Two-Port Memistor (TPM). In comparison with the classical Widrow memistor whose resistance depends on the charge passing through the auxiliary terminal, the resistance of the TPM is governed by the controlling signal applied to the programming gate. It is demonstrated that the SPDT switch can be constructed via two TPMs such that the RF chokes providing DC references and capacitors for AC couplings are no longer necessary. Since the TPM-based switches provide elegant and much simpler circuit solutions than the currently developed memristive switches, this paper could stimulate the research towards manufacturing the TPM as a solid-state device.

Keywords

RF switch; SPDT switch; Memistor; Memristive system

Authors

VÁVRA, J.; BAJER, J.; BIOLEK, D.

Released

9. 2. 2019

Publisher

IOP

Location

USA

ISBN

9789994904709

Book

2018 IEEE Radio and Antenna Days of the Indian Ocean, RADIO 2018

ISBN

1757-8981

Periodical

IOP Conference Series: Materials Science and Engineering

Year of study

524

Number

012008

State

United Kingdom of Great Britain and Northern Ireland

Pages from

1

Pages to

4

Pages count

4

URL

https://doi.org/10.1088/1757-899X/524/1/012008

BibTex

@inproceedings{BUT158358,
  author="Jiří {Vávra} and Josef {Bajer} and Dalibor {Biolek}",
  title="RF Single-Pole Double-Throw Switch Based on Two-Port Memistor",
  booktitle="2018 IEEE Radio and Antenna Days of the Indian Ocean, RADIO 2018",
  year="2019",
  journal="IOP Conference Series: Materials Science and Engineering",
  volume="524",
  number="012008",
  pages="1--4",
  publisher="IOP",
  address="USA",
  doi="10.1088/1757-899X/524/1/012008",
  isbn="9789994904709",
  issn="1757-8981",
  url="https://doi.org/10.1088/1757-899X/524/1/012008"
}