Publication detail

Suppression of axial growth by boron incorporation in GaAs nanowires grown by self-catalyzed molecular beam epitaxy

LANCASTER, S. GROISS, H. ZEDERBAUER, T. ANDREWS, A. MACFARLAND, D. SCHRENK, W. STRASSER, G. DETZ, H.

Original Title

Suppression of axial growth by boron incorporation in GaAs nanowires grown by self-catalyzed molecular beam epitaxy

English Title

Suppression of axial growth by boron incorporation in GaAs nanowires grown by self-catalyzed molecular beam epitaxy

Type

journal article in Scopus

Language

en

Original Abstract

The addition of boron to GaAs nanowires grown by self-catalyzed molecular beam epitaxy was found to have a strong effect on the nanowire morphology, with axial growth greatly reduced as the nominal boron concentration was increased. Transmission electron microscopy measurements show that the Ga catalyst droplet was unintentionally consumed during growth. Concurrent radial growth, a rough surface morphology and tapering of nanowires grown under boron flux suggest that this droplet consumption is due to reduced Ga adatom diffusion on the nanowire sidewalls in the presence of boron. Modelling of the nanowire growth puts the diffusion length of Ga adatoms under boron flux at around 700–1000 nm. Analyses of the nanowire surfaces show regions of high boron concentration, indicating the surfactant nature of boron in GaAs.

English abstract

The addition of boron to GaAs nanowires grown by self-catalyzed molecular beam epitaxy was found to have a strong effect on the nanowire morphology, with axial growth greatly reduced as the nominal boron concentration was increased. Transmission electron microscopy measurements show that the Ga catalyst droplet was unintentionally consumed during growth. Concurrent radial growth, a rough surface morphology and tapering of nanowires grown under boron flux suggest that this droplet consumption is due to reduced Ga adatom diffusion on the nanowire sidewalls in the presence of boron. Modelling of the nanowire growth puts the diffusion length of Ga adatoms under boron flux at around 700–1000 nm. Analyses of the nanowire surfaces show regions of high boron concentration, indicating the surfactant nature of boron in GaAs.

Keywords

nanowires, BGaAs, molecular beam epitaxy, nanowire growth

Released

08.02.2019

Pages from

065602-1

Pages to

065602-10

Pages count

10

URL

Documents

BibTex


@article{BUT152184,
  author="Suzanne {Lancaster} and Heiko {Groiss} and Tobias {Zederbauer} and Aaron Maxwell {Andrews} and Donald {MacFarland} and Werner {Schrenk} and Gottfried {Strasser} and Hermann {Detz}",
  title="Suppression of axial growth by boron incorporation in GaAs nanowires grown by self-catalyzed molecular beam epitaxy",
  annote="The addition of boron to GaAs nanowires grown by self-catalyzed molecular beam epitaxy was
found to have a strong effect on the nanowire morphology, with axial growth greatly reduced as
the nominal boron concentration was increased. Transmission electron microscopy measurements
show that the Ga catalyst droplet was unintentionally consumed during growth. Concurrent radial
growth, a rough surface morphology and tapering of nanowires grown under boron flux suggest
that this droplet consumption is due to reduced Ga adatom diffusion on the nanowire sidewalls in
the presence of boron. Modelling of the nanowire growth puts the diffusion length of Ga adatoms
under boron flux at around 700–1000 nm. Analyses of the nanowire surfaces show regions of high
boron concentration, indicating the surfactant nature of boron in GaAs.",
  chapter="152184",
  doi="10.1088/1361-6528/aaf11e",
  howpublished="print",
  number="6",
  volume="30",
  year="2019",
  month="february",
  pages="065602-1--065602-10",
  type="journal article in Scopus"
}