Publication detail

ALD Grown Dielectrics for Cap on a Chip: Fabrication and Characterization

FILLNER, P. HRDÝ, R. PRÁŠEK, J. NEŠPOR, D. HUBÁLEK, J.

Original Title

ALD Grown Dielectrics for Cap on a Chip: Fabrication and Characterization

English Title

ALD Grown Dielectrics for Cap on a Chip: Fabrication and Characterization

Type

conference paper

Language

en

Original Abstract

Atomic layer deposition (ALD) is a strong method of fabrication of high-k dielectrics with excellent properties. We present the ALD grown high-k CMOS compatible dielectrics used for capacitors on a chip application. Several dielectric films based on Al2O3 and HfO2 were grown on high-conductive silicon wafers and used as on-chip circular capacitors with diameter from 100 to 1500 μm. The effect of the interface between dielectric layers was examined in oxide stuck-based films deposited by plasma-enhanced atomic layer deposition. Performed material, structural and electrical analyses of deposited dielectrics confirmed their highly promising properties for application in new generation of 3D capacitors, semiconductor devices and energy storage element.

English abstract

Atomic layer deposition (ALD) is a strong method of fabrication of high-k dielectrics with excellent properties. We present the ALD grown high-k CMOS compatible dielectrics used for capacitors on a chip application. Several dielectric films based on Al2O3 and HfO2 were grown on high-conductive silicon wafers and used as on-chip circular capacitors with diameter from 100 to 1500 μm. The effect of the interface between dielectric layers was examined in oxide stuck-based films deposited by plasma-enhanced atomic layer deposition. Performed material, structural and electrical analyses of deposited dielectrics confirmed their highly promising properties for application in new generation of 3D capacitors, semiconductor devices and energy storage element.

Keywords

ALD; high-k dielectric; hafnium; aluminum; capcacitor

Released

21.08.2018

Publisher

IEEE Computer Society

Location

Serbia

ISBN

9781538657317

Book

41st International Spring Seminar on Electronics Technology ISSE2018

Pages from

1

Pages to

5

Pages count

5

BibTex


@inproceedings{BUT150785,
  author="Patrik {Fillner} and Radim {Hrdý} and Jan {Prášek} and Dušan {Nešpor} and Jaromír {Hubálek}",
  title="ALD Grown Dielectrics for Cap on a Chip: Fabrication and Characterization",
  annote="Atomic layer deposition (ALD) is a strong method of fabrication of high-k dielectrics with excellent properties. We present the ALD grown high-k CMOS compatible dielectrics used for capacitors on a chip application. Several dielectric films based on Al2O3 and HfO2 were grown on high-conductive silicon wafers and used as on-chip circular capacitors with diameter from 100 to 1500 μm. The effect of the interface between dielectric layers was examined in oxide stuck-based films deposited by plasma-enhanced atomic layer deposition. Performed material, structural and electrical analyses of deposited dielectrics confirmed their highly promising properties for application in new generation of 3D capacitors, semiconductor devices and energy storage element.",
  address="IEEE Computer Society",
  booktitle="41st International Spring Seminar on Electronics Technology ISSE2018",
  chapter="150785",
  doi="10.1109/ISSE.2018.8443766",
  howpublished="electronic, physical medium",
  institution="IEEE Computer Society",
  year="2018",
  month="august",
  pages="1--5",
  publisher="IEEE Computer Society",
  type="conference paper"
}