Publication detail

Fully Differential Difference Transconductance Amplifier Using FG-MOS Transistors

KUMNGERN, M. KHATEB, F.

Original Title

Fully Differential Difference Transconductance Amplifier Using FG-MOS Transistors

Type

conference paper

Language

English

Original Abstract

This paper presents a fully differential difference transconductance amplifier for applications to low-voltage and low-power analogue circuits. Differential difference input voltage can be obtained using floating-gate MOS transistor technique and it can be taken also the possibility of low supply voltage of the circuit. The proposed active building block has been simulated using TSMC 0.18 μm n-well CMOS technology. The circuit uses 0.4 V supply voltage and consumes a 27 μW of static power. A fully differential universal filter using proposed circuit as active device was presented as an example application.

Keywords

Floating-gate technique, fully differential difference transconductance amplifier, low-voltage and low-power circuit

Authors

KUMNGERN, M.; KHATEB, F.

RIV year

2015

Released

12. 11. 2015

Publisher

Institute of Electrical and Electronics Engineers Inc.

Location

Nusa Dua

ISBN

978-1-4673-6499-7

Book

2015 International Symposium on Intelligent Signal Processing and Communication Systems, ISPACS 2015

Pages from

337

Pages to

341

Pages count

5

URL

http://dx.doi.org/10.1109/ISPACS.2015.7432792

BibTex

@inproceedings{BUT125090,
  author="Montree {Kumngern} and Fabian {Khateb}",
  title="Fully Differential Difference Transconductance Amplifier Using FG-MOS Transistors",
  booktitle="2015 International Symposium on Intelligent Signal Processing and Communication Systems, ISPACS 2015",
  year="2015",
  pages="337--341",
  publisher="Institute of Electrical and Electronics Engineers Inc.",
  address="Nusa Dua",
  doi="10.1109/ISPACS.2015.7432792",
  isbn="978-1-4673-6499-7",
  url="http://dx.doi.org/10.1109/ISPACS.2015.7432792"
}