Publication detail

Ultimate Absolute Hooge Parameter for Semiconductors and Graphene

OHYA, H. TACANO, M. PAVELKA, J. ŠIKULA, J. MUSHA, T.

Original Title

Ultimate Absolute Hooge Parameter for Semiconductors and Graphene

Type

conference paper

Language

English

Original Abstract

The temperature dependence of the Hooge parameter alfaH for both n- and p-type InGaAs heterostructures with as-grown non-alloyed ohmic contacts shows good agreement with that estimated from the harmonic coupling model; alfaH is given by aa/lambda, where aa is the lattice constant and lambda is the mean free path of the semiconductor material. Experimental results for several other semiconducting materials normalized by the mobility ratio also verify the validity of the model. We are now able to estimate the Hooge parameter theoretically from only the material parameters, whereas the experimental results are scattered over several orders of magnitude.

Keywords

Hooge parameter; mean free path; mobility fluctuations; InGaAs; InP; GaAs

Authors

OHYA, H.; TACANO, M.; PAVELKA, J.; ŠIKULA, J.; MUSHA, T.

RIV year

2015

Released

9. 10. 2015

Publisher

IEEE

ISBN

978-1-4673-8335-6

Book

Noise and Fluctuations (ICNF)

Pages from

1

Pages to

4

Pages count

4

URL

http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7288616

BibTex

@inproceedings{BUT120497,
  author="H. {Ohya} and Munecazu {Tacano} and Jan {Pavelka} and Josef {Šikula} and Toshimitsu {Musha}",
  title="Ultimate Absolute Hooge Parameter for Semiconductors and Graphene
",
  booktitle="Noise and Fluctuations (ICNF)",
  year="2015",
  pages="1--4",
  publisher="IEEE",
  doi="10.1109/ICNF.2015.7288616",
  isbn="978-1-4673-8335-6",
  url="http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7288616"
}