Publication detail

Preparation of (001) preferentially oriented titanium thin films by ion-beam sputtering deposition on thermal silicon dioxide

GABLECH, I. SVATOŠ, V. CAHA, O. HRABOVSKÝ, M. PRÁŠEK, J. HUBÁLEK, J. ŠIKOLA, T.

Original Title

Preparation of (001) preferentially oriented titanium thin films by ion-beam sputtering deposition on thermal silicon dioxide

English Title

Preparation of (001) preferentially oriented titanium thin films by ion-beam sputtering deposition on thermal silicon dioxide

Type

journal article in Web of Science

Language

en

Original Abstract

We propose the ion-beam sputtering deposition providing Ti thin films of desired crystallographic orientation and smooth surface morphology not obtainable with conventional deposition techniques such as magnetron sputtering and vacuum evaporation. The sputtering was provided by argon broad ion beams generated by a Kaufman ion-beam source. In order to achieve the optimal properties of thin film, we investigated the Ti thin films deposited on an amorphous thermal silicon dioxide using X-ray diffraction, and atomic force microscopy. We have optimized deposition conditions for growing of thin films with the only (001) preferential orientation of film crystallites, and achieved ultra-low surface roughness of 0.55 nm. The deposited films have been found to be stable upon annealing up to 300 °C which is often essential for envisage subsequent deposition of piezoelectric AlN thin films.

English abstract

We propose the ion-beam sputtering deposition providing Ti thin films of desired crystallographic orientation and smooth surface morphology not obtainable with conventional deposition techniques such as magnetron sputtering and vacuum evaporation. The sputtering was provided by argon broad ion beams generated by a Kaufman ion-beam source. In order to achieve the optimal properties of thin film, we investigated the Ti thin films deposited on an amorphous thermal silicon dioxide using X-ray diffraction, and atomic force microscopy. We have optimized deposition conditions for growing of thin films with the only (001) preferential orientation of film crystallites, and achieved ultra-low surface roughness of 0.55 nm. The deposited films have been found to be stable upon annealing up to 300 °C which is often essential for envisage subsequent deposition of piezoelectric AlN thin films.

Keywords

Ion-beam sputtering deposition, Kaufman ion-beam source, titanium, thin film, (001) preferential orientation, surface roughness, XRD, AFM

Released

01.04.2016

Publisher

Springer US

Location

New York

Pages from

3329

Pages to

3336

Pages count

8

URL

BibTex


@article{BUT118989,
  author="Imrich {Gablech} and Vojtěch {Svatoš} and Ondřej {Caha} and Miloš {Hrabovský} and Jan {Prášek} and Jaromír {Hubálek} and Tomáš {Šikola}",
  title="Preparation of (001) preferentially oriented titanium thin films by ion-beam sputtering deposition on thermal silicon dioxide",
  annote="We propose the ion-beam sputtering deposition providing Ti thin films of desired
crystallographic orientation and smooth surface morphology not obtainable with conventional
deposition techniques such as magnetron sputtering and vacuum evaporation. The sputtering was
provided by argon broad ion beams generated by a Kaufman ion-beam source. In order to achieve
the optimal properties of thin film, we investigated the Ti thin films deposited on an amorphous
thermal silicon dioxide using X-ray diffraction, and atomic force microscopy. We have optimized
deposition conditions for growing of thin films with the only (001) preferential orientation of film
crystallites, and achieved ultra-low surface roughness of 0.55 nm. The deposited films have been
found to be stable upon annealing up to 300 °C which is often essential for envisage subsequent
deposition of piezoelectric AlN thin films.",
  address="Springer US",
  chapter="118989",
  doi="10.1007/s10853-015-9648-y",
  howpublished="online",
  institution="Springer US",
  number="7",
  volume="51",
  year="2016",
  month="april",
  pages="3329--3336",
  publisher="Springer US",
  type="journal article in Web of Science"
}