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Project detail
Duration: 01.05.2023 — 30.04.2026
Funding resources
Ministerstvo školství, mládeže a tělovýchovy ČR - Společná technologická iniciativa KDT
- whole funder (2023-11-02 - 2026-04-30)Evropská unie - HORIZON EUROPE
- whole funder (2023-05-17 - 2026-04-30)
On the project
ALL2GaN will comprehensively address technical challenges of adoption of GaN in power and RF electronic products. This will unlock GaN practical realisation capability from efficiency, size, weight and sustainable energy usage which will guarantee that the projects results will be reaching market and expected impact.
Keywordsgallium nitride; electron microscopy; integrated circuits; green power electronics, radio frequency applications
Mark
101111890/9A23005
Default language
English
People responsible
Kolíbal Miroslav, doc. Ing., Ph.D. - principal person responsible
Units
Fabrication and Characteris. of Nanostr.- (2022-08-30 - not assigned)