Detail publikace
Low-Voltage Two NMOS IVB-Based Voltage-Mode First-Order All-Pass Filter With Tuning
HERENCSÁR, N. KOTON, J. VRBA, K. METIN, B. CICEKOGLU, O.
Originální název
Low-Voltage Two NMOS IVB-Based Voltage-Mode First-Order All-Pass Filter With Tuning
Anglický název
Low-Voltage Two NMOS IVB-Based Voltage-Mode First-Order All-Pass Filter With Tuning
Jazyk
en
Originální abstrakt
In this paper, a new voltage-mode first-order all-pass filter suitable for low-voltage operation is presented. The circuit is composed of two n-channel metal-oxide semiconductor field effect transistors (NMOS)-based inverting voltage buffer (IVB), single capacitor, and three resistors. Replacing one of resistors by NMOS-based voltage-controlled resistor, the pole frequency of the filter can be controlled electronically. The theoretical results are verified by SPICE simulations using TSMC 0.13 um level-7 CMOS process parameters, where +-0.65 V supply voltages of the IVB is used.
Anglický abstrakt
In this paper, a new voltage-mode first-order all-pass filter suitable for low-voltage operation is presented. The circuit is composed of two n-channel metal-oxide semiconductor field effect transistors (NMOS)-based inverting voltage buffer (IVB), single capacitor, and three resistors. Replacing one of resistors by NMOS-based voltage-controlled resistor, the pole frequency of the filter can be controlled electronically. The theoretical results are verified by SPICE simulations using TSMC 0.13 um level-7 CMOS process parameters, where +-0.65 V supply voltages of the IVB is used.
Dokumenty
BibTex
@inproceedings{BUT92272,
author="Norbert {Herencsár} and Jaroslav {Koton} and Kamil {Vrba} and Bilgin {Metin} and Oguzhan {Cicekoglu}",
title="Low-Voltage Two NMOS IVB-Based Voltage-Mode First-Order All-Pass Filter With Tuning",
annote="In this paper, a new voltage-mode first-order all-pass filter suitable for low-voltage operation is presented. The circuit is composed of two n-channel metal-oxide semiconductor field effect transistors (NMOS)-based inverting voltage buffer (IVB), single capacitor, and three resistors. Replacing one of resistors by NMOS-based voltage-controlled resistor, the pole frequency of the filter can be controlled electronically. The theoretical results are verified by SPICE simulations using TSMC 0.13 um level-7 CMOS process parameters, where +-0.65 V supply voltages of the IVB is used.",
booktitle="Proceedings of the 11th International Conference on Development and Application Systems (DAS 2012)",
chapter="92272",
howpublished="electronic, physical medium",
year="2012",
month="may",
pages="119--121",
type="conference paper"
}