Detail publikace

Mutators for Transforming Nonlinear Resistor Into Memristor

Originální název

Mutators for Transforming Nonlinear Resistor Into Memristor

Anglický název

Mutators for Transforming Nonlinear Resistor Into Memristor

Jazyk

en

Originální abstrakt

A method of analogue emulation of the memristor with its prescribed charge (qM)-flux (phiM) constitutive relation is presented. The memristor is emulated via a resistor with nonlinear current (iR)-voltage (vR) relationship, and a mutator. The purpose of the mutator is to provide a similarity transformation of the current-voltage characteristic of the resistor into the constitutive relation of the memristor according to the equations qM=kyiR, phiM =kxvR, or phiM=kyiR, qM=kxvR, where kx, ky are real numbers fulfilling the condition kxky>0. It is shown that there are eight versions of these mutators. One of them is selected for experimental verification.

Anglický abstrakt

A method of analogue emulation of the memristor with its prescribed charge (qM)-flux (phiM) constitutive relation is presented. The memristor is emulated via a resistor with nonlinear current (iR)-voltage (vR) relationship, and a mutator. The purpose of the mutator is to provide a similarity transformation of the current-voltage characteristic of the resistor into the constitutive relation of the memristor according to the equations qM=kyiR, phiM =kxvR, or phiM=kyiR, qM=kxvR, where kx, ky are real numbers fulfilling the condition kxky>0. It is shown that there are eight versions of these mutators. One of them is selected for experimental verification.

BibTex


@inproceedings{BUT73106,
  author="Dalibor {Biolek} and Josef {Bajer} and Viera {Biolková} and Zdeněk {Kolka}",
  title="Mutators for Transforming Nonlinear Resistor Into Memristor",
  annote="A method of analogue emulation of the memristor with its prescribed charge (qM)-flux (phiM) constitutive relation is presented. The memristor is emulated via a resistor with nonlinear current (iR)-voltage (vR) relationship, and a mutator. The purpose of the mutator is to provide a similarity transformation of the current-voltage characteristic of the resistor into the constitutive relation of the memristor according to the equations qM=kyiR, phiM =kxvR, or phiM=kyiR, qM=kxvR, where kx, ky are real numbers fulfilling the condition kxky>0. It is shown that there are eight versions of these mutators. One of them is selected for experimental verification.",
  address="IEEE",
  booktitle="Proceedings of the ECCTD 2011",
  chapter="73106",
  howpublished="electronic, physical medium",
  institution="IEEE",
  year="2011",
  month="august",
  pages="488--491",
  publisher="IEEE",
  type="conference paper"
}