Detail publikace

Analysis of GaN Ultrathin Films grown by Direct Ion Beam Deposition

VOBORNÝ, S. MACH, J. POTOČEK, M. KOSTELNÍK, P. ČECHAL, J. BÁBOR, P. SPOUSTA, J. ŠIKOLA, T.

Originální název

Analysis of GaN Ultrathin Films grown by Direct Ion Beam Deposition

Anglický název

Analysis of GaN Ultrathin Films grown by Direct Ion Beam Deposition

Jazyk

en

Originální abstrakt

In the contribution, the in-situ analysis of GaN ultrathin films grown on Si (111) by a low-temperature technique combining a hyperthermal nitrogen ion beam and gallium atomic beam under UHV conditions will be presented. Low energy ions from the beam (10 -100 eV) provides an extra kinetic energy on the surface, thus substituting a need for higher temperatures typical for other techniques (e.g. MOCVD). Additionally, this extra energy is responsible for a subsurface growth improving the layer adhesion. Deposition experiments were carried out at different operation parameters. The dependence on ion-impact energy, substrate temperature and ion-to-atom arrival ratio was examined. The ultrathin films were analyzed using XPS to find their composition, their structure- and morphology analyses were carried out by LEED and AFM, respectively. Compared to our previous experiments, the deposition setup was improved by modification of a gas distribution system and by application of nitrogen of higher purity (6-9). The former allowed us to bake up the whole vacuum apparatus including the high-energy ion source chamber and transport optics. It resulted in the higher purity of ion beam and, hence, in better conditions for deposition of clean oxygen-free GaN films.

Anglický abstrakt

In the contribution, the in-situ analysis of GaN ultrathin films grown on Si (111) by a low-temperature technique combining a hyperthermal nitrogen ion beam and gallium atomic beam under UHV conditions will be presented. Low energy ions from the beam (10 -100 eV) provides an extra kinetic energy on the surface, thus substituting a need for higher temperatures typical for other techniques (e.g. MOCVD). Additionally, this extra energy is responsible for a subsurface growth improving the layer adhesion. Deposition experiments were carried out at different operation parameters. The dependence on ion-impact energy, substrate temperature and ion-to-atom arrival ratio was examined. The ultrathin films were analyzed using XPS to find their composition, their structure- and morphology analyses were carried out by LEED and AFM, respectively. Compared to our previous experiments, the deposition setup was improved by modification of a gas distribution system and by application of nitrogen of higher purity (6-9). The former allowed us to bake up the whole vacuum apparatus including the high-energy ion source chamber and transport optics. It resulted in the higher purity of ion beam and, hence, in better conditions for deposition of clean oxygen-free GaN films.

Dokumenty

BibTex


@misc{BUT63403,
  author="Stanislav {Voborný} and Jindřich {Mach} and Michal {Potoček} and Petr {Kostelník} and Jan {Čechal} and Petr {Bábor} and Jiří {Spousta} and Tomáš {Šikola}",
  title="Analysis of GaN Ultrathin Films grown by Direct Ion Beam Deposition",
  annote="In the contribution, the in-situ analysis of GaN ultrathin films grown on Si (111) by a low-temperature technique combining a hyperthermal nitrogen ion beam and gallium atomic beam under UHV conditions will be presented. Low energy ions from the beam (10 -100 eV) provides an extra kinetic energy on the surface, thus substituting a need for higher temperatures typical for other techniques (e.g. MOCVD). Additionally, this extra energy is responsible for a subsurface growth improving the layer adhesion. Deposition experiments were carried out at different operation parameters. The dependence on ion-impact energy, substrate temperature and ion-to-atom arrival ratio was examined. The ultrathin films were analyzed using XPS to find their composition, their structure- and morphology analyses were carried out by LEED and AFM, respectively. Compared to our previous experiments, the deposition setup was improved by modification of a gas distribution system and by application of nitrogen of higher purity (6-9). The former allowed us to bake up the whole vacuum apparatus including the high-energy ion source chamber and transport optics. It resulted in the higher purity of ion beam and, hence, in better conditions for deposition of clean oxygen-free GaN films.",
  chapter="63403",
  edition="1",
  year="2005",
  month="september",
  pages="117--117",
  type="presentation"
}